Mechanical effect of process condition and abrasive concentration on material removal rate profile in copper chemical mechanical planarization |
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| Authors: | Hyunseop Lee Boumyoung Park Haedo Jeong |
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| Affiliation: | 1. Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China;2. Electromechanical Products Division, Beijing Spacecrafts, China Academy of Space Technology, Beijing 100086, China;1. School of Mechanical Engineering, Sungkyunkwan University (SKKU), 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, Republic of Korea;2. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, Republic of Korea;1. School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, 300130, People''s Republic of China;2. Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin, 300130, People''s Republic of China;3. Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, 300308, China |
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| Abstract: | Recently, many researchers have studied the material removal mechanism of copper chemical mechanical planarization (CMP). On the basis of their previous works, we studied the mechanical effect of copper (Cu) CMP on the material removal rate profile. Copper CMP was performed using citric acid (C6H8O7), hydrogen peroxide (H2O2), colloidal silica, and benzotriazole (BTA, C6H4N3H) as a complexing agent, an oxidizer, an abrasive, and a corrosion inhibitor, respectively. In this paper, the abrasives and process condition are main mechanical factors of CMP. The colloidal silica, used as an abrasive in copper CMP slurry containing 0.01 M citric acid and 3 vol% hydrogen peroxide, controlled the wafer edge profile by abrading the wafer edge. The polishing pressure did not contribute to the material removal rate (MRR) profile, but did to the MRR. As the rotational velocity of the polishing head and table increased, the deviation of MRR profile became smaller. The results of this paper showed that the abrasive concentration was the key factor which controlled the wafer edge profile, and also the rotational velocity was the key factor which controlled wafer center profile of MRR. |
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