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Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO2
作者姓名:宋晓岚  徐大余  张晓伟  史训达  江楠  邱冠周
作者单位:[1]Department of Inorganic Materials, School of Resources Processing and Bioengineering, Central South University, Changsha 410083, China [2]Silicon Wafer Manufacture Department, Grinm Semiconductor Materials Co., Ltd., Beijing 100088, China
基金项目:Project(2005DFBA028) supported by the International Cooperation of Science and Technology Ministry of China; Project(LA07023) supported by the National Undergraduate Innovative Experiment Plan Acknowledgements This work was carried out with the support of the Instrumental Analyzing & Testing Centre in School of Resources Processing and Bioengineering, Central South University, China. We thank Mrs. NIE for her help and useful advice.
摘    要:The electrochemical behavior of silicon wafer in alkaline slurry with nano-sized CeO2 abrasive was investigated. The variations of corrosion potential (φcorr) and corrosion current density (Jcorr) of the P-type (100) silicon wafer with the slurry pH value and the concentration of abrasive CeO2 were studied by polarization curve technologies. The dependence of the polishing rate on the pH and the concentration of CeO2 in slurries during chemical mechanical polishing(CMP) were also studied. It is discovered that there is a large change of φcorr and Jcorr when slurry pH is altered and the Jcorr reaches the maximum (1.306 μA/cm^2) at pH 10.5 when the material removal rate(MRR) comes to the fastest value. The Jcorr increases gradually from 0.994 μA/cm^2 with 1% CeO2 to 1.304 μA/cm^2 with 3% CeO2 and reaches a plateau with the further increase of CeO2 concentration. There is a considerable MRR in the slurry with 3% CeO/at pH 10.5. The coherence between Jcorr and MRR elucidates that the research on the electrochemical behavior of silicon wafers in the alkaline slurry could offer theoretic guidance on silicon polishing rate and ensure to adjust optimal components of slurry.

关 键 词:化学机械抛光  物质脱模速度  电化学特性  泥浆
收稿时间:2006-12-22
修稿时间:2007-08-22

Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO2
SONG Xiao-lan,XU Da-yu,ZHANG Xiao-wei,SHI Xun-da,JIANG Nan,QIU Guan-zhou.Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO2[J].Transactions of Nonferrous Metals Society of China,2008,18(1):178-182.
Authors:SONG Xiao-lan  XU Da-yu  ZHANG Xiao-wei  SHI Xun-da  JIANG Nan  QIU Guan-zhou
Affiliation:[1]Department of Inorganic Materials, School of Resources Processing and Bioengineering, Central South University, Changsha 410083, China; [2]Silicon Wafer Manufacture Department, Grinm Semiconductor Materials Co., Ltd., Beijing 100088, China
Abstract:The electrochemical behavior of silicon wafer in alkaline slurry with nano-sized CeO2 abrasive was investigated. The variations of corrosion potential (φcorr) and corrosion current density (Jcorr) of the P-type (100) silicon wafer with the slurry pH value and the concentration of abrasive CeO2 were studied by polarization curve technologies. The dependence of the polishing rate on the pH and the concentration of CeO2 in slurries during chemical mechanical polishing(CMP) were also studied. It is discovered that there is a large change of φcorr and Jcorr when slurry pH is altered and the Jcorr reaches the maximum (1.306 μA/cm2) at pH 10.5 when the material removal rate(MRR) comes to the fastest value. The Jcorr increases gradually from 0.994 μA/cm2 with 1% CeO2 to 1.304 μA/cm2 with 3% CeO2 and reaches a plateau with the further increase of CeO2 concentration. There is a considerable MRR in the slurry with 3% CeO2 at pH 10.5. The coherence between Jcorr and MRR elucidates that the research on the electrochemical behavior of silicon wafers in the alkaline slurry could offer theoretic guidance on silicon polishing rate and ensure to adjust optimal components of slurry.
Keywords:Chemical mechanical polishing(CMP)  material removal rate(MRR)  electrochemical characteristics  slurry  abrasive CeO2
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