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Method of surface treatment on sapphire substrate
作者姓名:牛新环  刘玉岭  檀柏梅  韩丽英  张建新
作者单位:Institute of Microelectronic, Hebei University of Technology, Tianjin 300130, China
基金项目:Project(043801211) supported by the Tianjin Natural Science Foundation; Project(20050080007) supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China
摘    要:

关 键 词:蓝宝石  衬底  表面处理  化学机械抛光
收稿时间:2006-04-10
修稿时间:2006-04-25

Method of surface treatment on sapphire substrate
NIU Xin-huan, LIU Yu-ling, TAN Bai-mei, HAN Li-ying, ZHANG Jian-xin.Method of surface treatment on sapphire substrate[J].Transactions of Nonferrous Metals Society of China,2006,16(B02):732-734.
Authors:NIU Xin-huan  LIU Yu-ling  TAN Bai-mei  HAN Li-ying  ZHANG Jian-xin
Abstract:Sapphire single crystals are widely used in many areas because of the special physic properties and important application value. As an important substrate material, stringent surface quality requirements, i.e. surface finish and flatness, are required. The use of CMP technique can produce high quality surface finishes at low cost and with fast material removal rates. The sapphire substrate surface is treated by using CMP method. According to sapphire substrate and its product properties, SiO2 sol is chosen as abrasive. The particle size is 15-25 nm and the concentration is 40%. According to the experiment results, pH value is 10.5-11.5. After polishing and cleaning the sapphire surface, the surface roughness was measured by using AFM method and the lowest value of Ra 0.1 nm was obtained. From the results, it can be seen that using such method, the optimal sapphire surface can be gotten, which is advantageous for epitaxial growth and device making-up.
Keywords:sapphire  substrate  surface treatment  chemical mechanical polishing  slurry
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