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ACRT-Te溶液Bridgman法生长的In掺杂CdMnTe界面研究(英文)
引用本文:杜园园,介万奇,郑昕,王涛,白旭旭,于晖.ACRT-Te溶液Bridgman法生长的In掺杂CdMnTe界面研究(英文)[J].中国有色金属学会会刊,2012(Z1):143-147.
作者姓名:杜园园  介万奇  郑昕  王涛  白旭旭  于晖
作者单位:西北工业大学材料学院凝固技术国家重点实验室;上海交通大学物理系人工结构及量子调控教育部重点实验室
基金项目:Projects (50872111, 50902113, 61274081) supported by the National Natural Science Foundation of China;Project (2011CB610406) supported by the National Basic Research Program of China;Project (B08040) supported by the 111 Project of China;Project (JC20100228) supported by Foundation for Fundamental Research of Northwestern Polytechnical University (NPU), China;Project (SKLSP201012) supported by the Research Fund of the State Key Laboratory of Solidification Processing (NPU), China
摘    要:采用ACRT-Te溶液垂直布里奇曼法成功制备出直径为30mm、长度为60mm的CdMnTe晶锭。相对于普通布里奇曼法生长的CdMnTe晶锭,Te溶液法生长的 CdMnTe晶锭中的孪晶大大减少。但是由于较高的Te夹杂相密度,红外透过成像显示晶锭生长界面的微观形貌既不均匀也不规则。同时,采用激光共聚焦显微镜也观察到CdMnTe富Te区存在无规律沉积的含有孔洞的不规则形状Te相。如果采用合适的生长工艺得到较为平直的生长界面,Te溶液垂直布里奇曼法可以有效减少CdMnTe晶体中的孪晶。

关 键 词:溶液法生长  垂直Bridgman法  CdMnTe  孪晶  生长界面  Te夹杂相

Growth interface of In-doped CdMnTe from Te solution with vertical Bridgman method under ACRT technique
DU Yuan-yuan,JIE Wan-qi,ZHENG Xin,WANG Tao,BAI Xu-xu,YU Hui.Growth interface of In-doped CdMnTe from Te solution with vertical Bridgman method under ACRT technique[J].Transactions of Nonferrous Metals Society of China,2012(Z1):143-147.
Authors:DU Yuan-yuan  JIE Wan-qi  ZHENG Xin  WANG Tao  BAI Xu-xu  YU Hui
Affiliation:1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China; 2. Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China
Abstract:CdMnTe (CMT) crystals were grown from Te solution with vertical Bridgman method under accelerated crucible rotation (ACRT) technique. Ingot in diameter of 30 mm and length of 60 mm was obtained. The result shows that as-grown CMT has fewer twins compared with the one grown by conventional vertical Bridgman method. However, IR microscopy shows that the microscopic growth interface morphology is non-uniform and irregular, which is attributed to higher Te inclusions density. Meanwhile, the laser confocal microscope images reveal that the Te phases are deposited randomly in the Te-rich CMT region with irregular shapes and voids. By optimizing the growth parameters to obtain a smooth interface, the Te solution vertical Bridgman technique can effectively reduce the twins in CMT crystal.
Keywords:solution growth  vertical Bridgman method  CdMnTe  twins  growth interface  Te inclusions
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