| 溶胶-凝胶法制备Y2O3掺杂ZnO压敏薄膜及其电性能（英文） |
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| 引用本文： | 徐东,姜斌,焦雷,崔凤单,徐红星,杨永涛,于仁红,程晓农.溶胶-凝胶法制备Y2O3掺杂ZnO压敏薄膜及其电性能（英文）[J].中国有色金属学会会刊,2012(Z1):110-114. |
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| 作者姓名： | 徐东 姜斌 焦雷 崔凤单 徐红星 杨永涛 于仁红 程晓农 |
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| 作者单位： | 江苏大学材料科学与工程学院;中国科学院半导体研究所半导体材料科学重点实验室;西安交通大学电力设备电气绝缘国家重点实验室;电子科技大学电子薄膜与集成器件国家重点实验室;常州江苏大学工程技术研究院;常州明尔瑞陶瓷有限公司 |
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| 基金项目： | Projects (BK2011243, BK2012156) supported by the Natural Science Foundation of Jiangsu Province, China;Project (EIPE11204) supported by the State Key Laboratory of Electrical Insulation and Power Equipment, China;Project (KF201104) supported by the State Key Laboratory of New Ceramic and Fine Processing, China;Project (KFJJ201105) supported by the Opening Project of State key Laboratory of Electronic Thin Films and Integrated Devices, China;Project (10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province,China;Project (CJ20120058) supported by the Application Program for Basic Research of Changzhou, China;Project (11JDG084) supported by the Research Foundation of Jiangsu University, China |
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| 摘 要： | 研究溶胶-凝胶法制备不同浓度Y2O3掺杂对ZnO-Bi2O3压敏薄膜微观结构和电性能的影响。研究结果表明:Y2O3掺杂ZnO薄膜在750°C空气气氛下退火1h,ZnO薄膜的特征峰与ZnO的六方纤锌矿结构相匹配;ZnO晶粒直径随着掺杂量的增加而减小,Y2O3稀土掺杂氧化锌晶粒细化;薄膜厚度均匀且每一层厚度约80nm。研究结果还表明:当Y3+掺杂浓度为0.2%(摩尔分数)时,ZnO薄膜的非线性伏安特性最好,其漏电流为0.46mA,电位梯度为110V/mm,非线性系数为3.1。
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| 关 键 词： | 氧化锌 Y2O3压敏 薄膜 溶胶-凝胶法 电性能 显微组织 |
Sol-gel synthesis of Y2O3-doped ZnO thin films varistors and their electrical properties |
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| XU Dong,JIANG Bin,JIAO Lei,CUI Feng-dan,XU Hong-xing,YANG Yong-tao,YU Ren-hong,CHENG Xiao-nong.Sol-gel synthesis of Y2O3-doped ZnO thin films varistors and their electrical properties[J].Transactions of Nonferrous Metals Society of China,2012(Z1):110-114. |
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| Authors: | XU Dong JIANG Bin JIAO Lei CUI Feng-dan XU Hong-xing YANG Yong-tao YU Ren-hong CHENG Xiao-nong |
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| Affiliation: | 1. School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; 2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 3. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China; 4. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; 5. Changzhou Engineering Research Institute of Jiangsu University, Changzhou 213000, China; 6. Changzhou Ming Errui Ceramics Co., Ltd., Changzhou 213102, China |
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| Abstract: | Y2O3-doped Zn-OBi2O3 thin films were fabricated on silicon substrates by sol–gel process and annealed in air at 750 °C for 1 h. Microstructure and electrical properties of ZnO thin films were investigated. XRD analysis shows that all peaks of ZnO thin films are well matched with hexagonal wurtzite structure of ZnO. SEM results present that the ZnO grain size decreases with the increase of dopant concentration, which means that rare earth doped can refine the grain size. The thickness of each layer is uniform and the value of thickness is about 80 nm. The nonlinear V–I characteristics with the leakage current of 0.46 μA, the threshold field of 110 V/mm and the nonlinear coefficient of 3.1 could be achieved when the films contain 0.2% (mole fraction) yttrium ion. |
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| Keywords: | zinc oxide Y2O3 varistor film sol-gel process electrical properties microstructure |
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