| 高能球磨掺杂氧化物粉体和压敏陶瓷粉体对氧化锌压敏陶瓷性能的影响(英文) |
| |
| 引用本文： | 徐东,唐冬梅,焦雷,袁宏明,赵国平,程晓农.高能球磨掺杂氧化物粉体和压敏陶瓷粉体对氧化锌压敏陶瓷性能的影响(英文)[J].中国有色金属学会会刊,2012,22(6):1423-1431. |
| |
| 作者姓名： | 徐东 唐冬梅 焦雷 袁宏明 赵国平 程晓农 |
| |
| 作者单位： | 江苏大学材料科学与工程学院;中国科学院半导体研究所,半导体材料科学重点实验室;西安交通大学电力设备与电气绝缘国家重点实验室;常州江苏大学工程技术研究院;吉林大学化学学院,无机合成与制备化学国家重点实验室 |
| |
| 基金项目： | Project (BK2011243) supported by the Natural Science Foundation of Jiangsu Province,China;Project (EIPE11204) supported by the State Key Laboratory of Electrical Insulation and Power Equipment,China;Project (KF201104) supported by the State Key Laboratory of New Ceramic and Fine Processing,China;Project (KFJJ201105) supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices,China;Project (2011-22) supported by State Key Laboratory of Inorganic Synthesis and Preparative Chemistry,China;Project (10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province,China;Project (11JDG084) supported by the Research Foundation of Jiangsu University,China |
| |
| 摘 要： | 采用高能球磨掺杂氧化物粉体和压敏陶瓷粉体2种不同制备技术制备ZnO-Bi2O3压敏陶瓷,通过扫描电镜和X-射线衍射对其显微组织和相成分进行分析,探讨不同高能球磨制备技术对氧化锌压敏陶瓷电性能和显微组织的影响。结果表明:压敏陶瓷粉体高能球磨是制备高性能氧化锌压敏陶瓷的一种优异的技术,在1000°C下烧结3h,压敏陶瓷的电位梯度为617V/mm,非线性系数为57;压敏陶瓷的致密度高达95%,显微组织均匀、致密;高能球磨压敏陶瓷粉体可细化晶粒,增强烧结驱动力,加速烧结过程,降低烧结温度。
|
| 关 键 词： | 压敏电阻 氧化锌 高能球磨 电性能 显微组织 |
| 收稿时间： | 31 May 2011 |
Effects of high-energy ball milling oxide-doped and varistor ceramic powder on ZnO varistor |
| |
| XU Dong,TANG Dong-mei,JIAO Lei,YUAN Hong-ming,ZHAO Guo-ping,CHENG Xiao-nong.Effects of high-energy ball milling oxide-doped and varistor ceramic powder on ZnO varistor[J].Transactions of Nonferrous Metals Society of China,2012,22(6):1423-1431. |
| |
| Authors: | XU Dong TANG Dong-mei JIAO Lei YUAN Hong-ming ZHAO Guo-ping CHENG Xiao-nong |
| |
| Affiliation: | 1,4 1.School of Materials Science and Engineering,Jiangsu University,Zhenjiang 212013,China;2.Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;3.State Key Laboratory of Electrical Insulation and Power Equipment,Xi’an Jiaotong University,Xi’an 710049,China;4.Changzhou Engineering Research Institute of Jiangsu University,Changzhou 213000,China;5.State Key Laboratory of Inorganic Synthesis and Preparative Chemistry,College of Chemistry,Jilin Universi ty,Changchun 130012,China |
| |
| Abstract: | ZnO varistor ceramics doped with Bi2O3,Sb2O3,Co2O3,Cr2O3,and MnO2 were prepared separately by two high-energy ball milling processes:oxide-doped and varistor ceramic powder.A comparison in the electrical and microstructural properties of the samples obtained by both methods was made.The best results on these characteristics were achieved through the high-energy ball milling varistor ceramic powder route,obtaining a nonlinear coefficient of 57 and a breakdown field of 617 V/mm at a sintering temperature of 1000 °C for 3 h.The samples synthesized by this technique show not only high density value,95% of the theoretical density,but also a homogeneous microstructure,which compete with those obtained by the high-energy ball milling oxide-doped powder route.With the advantage that the high-energy ball milling varistor ceramic powder route can refine grain,increase the driving force of sintering,accelerate the sintering process,and reduce the sintering temperature. |
| |
| Keywords: | varistor ZnO high-energy ball milling electrical characteristic microstructure |
| 本文献已被 CNKI 维普 ScienceDirect 等数据库收录！ |
|
