采用WC过渡层增加金刚石薄膜附着力的研究

在微波等离子体化学气相沉积装置中，以WC-8％Co为基体，采用氢等离子体脱碳、磁控溅射镀W、碳化等方法，制备了微晶WC过渡层。研究了金刚石薄膜与基体的附着力。结果表明，表面脱碳后再镀W膜，W填充了氢等离子体脱碳时刀具表面因钴蒸发而留下的空洞，形成过渡层，在随后的碳化中和基体WC连接较为紧密，能增加金刚石薄膜与基体附着力，克服单纯的氢等离子体脱碳还原法降低刀具基体硬度、不能完全消除钴的有害影响的缺点。

WC DIFFUSION BARRIER LAYER IMPROVES DIAMOND FILM ADHESION TO WC-CO SUBSTRATE

Is this study, cemented tungsten carbide (WC-wt8%Co) was diamond coated by the microwave plasma chemical vapor deposition (MWCVD) method. Micro grain tungsten carbide diffusion barrier was formed by hydrogen plasma decarburization substrate, magnetron sputtering tungsten and carburized in the initial stage of diamond deposition. The adhesion of diamond film to cemented tungsten carbide was investigated in this research. The Results suggested that the tungsten layer deposited on the decarburized WC-Co substrate led to strong interface bonding to the substrates, the mechanical hardness of the substrates were maintained through tungsten grains filling the cavities left by cobalt evaporation in the pretreatment of hydrogen plasma decarburization process, barrier tungsten layer was bonded strongly to decarburized WC, which can entirely eliminate the negative effect of cobalt, therefore improved the adhesion of diamond film onto WC-Co substrate. Compared with solo decarburization and recarburization of the substrate pretreated in hydrogen plasma, this pretreatment method can keep the hardness of substrates and eliminate the adverse effect of cobalt.