基于响应面法的单晶硅CMP抛光工艺参数优化

为提高单晶硅化学机械抛光(chemical mechanical polishing，CMP)的表面质量和抛光速度，通过响应面法优化CMP抛光压力、抛光盘转速和抛光液流量3个工艺参数，结果表明抛光压力、抛光盘转速、抛光液流量对材料去除率和抛光后表面粗糙度的影响依次减小。通过数学模型和试验验证获得最优的工艺参数为:抛光压力，48.3 kPa；抛光盘转速，70 r/min；抛光液流量，65 mL/min。在此工艺下，单晶硅CMP的材料去除率为1 058.2 nm/min，表面粗糙度为0.771 nm，其抛光速度和表面质量得到显著提高。 

Optimization of CMP processing parameters for Si based on response surface method

To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology. The results show that polishing pressure has the largest influence on the material removal rate and surface roughness of Si polishing. The second largest influential factor is polishing rotational speed and the third is polishing fluid flow rate. The prediction models of material removal rate and surface roughness are established. The optimum processing parameters are obtained when the polishing pressure is 48.3 kPa, polishing rotational speed is 70 r/min and polishing fluid flow rate is 65 mL/min with the prediction models and by experiments. With these processing parameters, the material removal rate and surface roughness are 1 058.2 nm/min and 0.771 nm, respectively.