| GaAs器件和MMIC的失效分析 |
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| 引用本文： | 崔晓英,黄云,恩云飞.GaAs器件和MMIC的失效分析[J].失效分析与预防,2010,5(3):187-192. |
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| 作者姓名： | 崔晓英 黄云 恩云飞 |
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| 作者单位： | 工业和信息化部电子第五研究所,电子元器件可靠性物理及其应用技术国防科技重点实验室,广州,510610 |
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| 基金项目： | 国防科技重点实验室基金项目 |
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| 摘 要： | 从可靠性物理的角度,分析引起砷化镓（GaAs）器件和单片微波集成电路（MMIC）退化或失效的主要失效模式及其失效机理,明确了GaAsMMIC的可靠性问题主要表现为有源器件、无源器件和环境因素等引入了损伤退化,并针对几种常见的失效原因：过电烧毁、静电损伤、器件分层、设计和工艺缺陷等进行举例分析,为生产和使用过程中控制其主要的失效模式及失效机理提供参考和依据。
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| 关 键 词： | 砷化镓器件 单片微波集成电路 失效模式和机理 失效分析 |
Failure Analysis of GaAs Devices and MMIC |
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| CUI Xiao-ying,HUANG Yun,EN Yun-fei.Failure Analysis of GaAs Devices and MMIC[J].Failure Analysis and Prevention,2010,5(3):187-192. |
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| Authors: | CUI Xiao-ying HUANG Yun EN Yun-fei |
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| Affiliation: | (The No.5 Research Institute of MIIT,National Key Laboratory of Science and Technology onReliability Physics and Application of Electrical component,Guangzhou 510610,China) |
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| Abstract: | Based on reliability physics,the basic failure modes and mechanisms of GaAs devices and MMIC have been analyzed.Degeneration and damage related to active parts and passive parts of GaAs devices and MMIC and environments are dominant reliability problems.Further more,examples are showed on several familiar failure causes,including electrical over stress burnout,electrostatic discharge damage,device delamination,design and process flaw,which provided references for controlling the main failure modes and failure mechanisms of GaAs devices and MMIC. |
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| Keywords: | GaAs device monolithic microwave integrated circuit failure mode and mechanism failure analysis |
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