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| Dynamic study in partial transient liquid phase bonding of Si3 N4 | |
| 作者姓名： | 邹家生 初雅杰 许志荣 陈光 |
| 作者单位： | [1]DepartmentofMaterialsScienceandEngineering,NanjingUniversityofScienceandTechnology,Nanjin,210094 [2]DepartmentofMaterialsScienceandEngineering,NanjingUniversityofScienceandTechnology,Nanjin,210094 [3]DepartmentofWelding,JiangsuUniversityofScienceandTechnology,Zhenjiang,212003 |
| 摘 要： | Dynamics in partial transient liquid phase bonding ( PTLP bonding) of Si3N4 ceramic with Ti/Cu/Ti multiinterlayer was systematically studied through micro-analysis of joint interfaces. The results show that growth of reaction layer and isothermal solidification procession do at the same time. Growth of reaction layer and moving of isothermal solidification interface obey the parabolic law governed by the diffusion of participating elements during the PTLP bonding. Coordination of the above two dynamics process is done through time and temperature. When reaction layer thickness is suitable and isothermalsol idification process is finished, the high bonding strength at room temperature and high temperature are obtained. |
| 关 键 词： | 部分液体相连接 氮化硅瓷 等温凝固 动力学 反应层 |
Dynamic study in partial transient liquid phase bonding of Si3N4 |
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| Zou Jiasheng and Chen Guang.Dynamic study in partial transient liquid phase bonding of Si3 N4[J].China Welding,2004,13(2):101-105. | |
| Authors: | Zou Jiasheng and Chen Guang |
| Affiliation: | 1. Department of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjin,210094;Department of Welding,Jiangsu University of Science and Technology,Zhenjiang,212003 2. Department of Welding,Jiangsu University of Science and Technology,Zhenjiang,212003 3. Department of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjin,210094 |
| Abstract: | Dynamics in partial transient liquid phase bonding (PTLP bonding) of Si_3N_4 ceramic with Ti/Cu/Ti multi-interlayer was systematically studied through micro-analysis of joint interfaces. The results show that growth of reaction layer and isothermal solidification procession do at the same time. Growth of reaction layer and moving of isothermal solidification interface obey the parabolic law governed by the diffusion of participating elements during the PTLP bonding. Coordination of the above two dynamics process is done through time and temperature. When reaction layer thickness is suitable and isothermal solidification process is finished, the high bonding strength at room temperature and high temperature are obtained. |
| Keywords: | partial transient liquid phase bonding silicon nitride ceramic isothermal solidification reaction layer kinetics |
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