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Anodic oxides on InAlP formed in sodium tungstate electrolyte |
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| Authors: | A Suleiman GE Thompson MJ Graham S Moisa H Habazaki |
| Affiliation: | a Corrosion and Protection Centre, School of Materials, University of Manchester, P.O. Box 88, Manchester M60 1QD, UK b Corrosion and Protection Group, University of Antioquia, Medellín, Colombia c Institute for Microstructural Sciences, National Research Council of Canada, Montreal Road, Ottawa K1A 0R6, Canada d Graduate Engineering School, Hokkaido University, N13 W8, Kita-ku, Sapporo 060-8628, Japan |
| Abstract: | Amorphous anodic oxide films on InAlP have been grown at high efficiency in sodium tungstate electrolyte. The films are shown to comprise an outer layer containing indium species, an intermediate layer containing indium and aluminium species and an inner layer containing indium, aluminium and phosphorus species. The layering correlates with the influence on cation migration rates of the energies of In3+-O, Al3+-O and P5+-O bonds, which increase in this order. The film surface becomes increasingly rough with increase of the anodizing voltage as pores develop in the film, which appear to be associated with generation of oxygen gas. |
| Keywords: | A Electronic materials B AES B RBS B SEM B TEM B XPS |
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