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Synthesis and characterization of Cu2ZnSnS4 thin films grown by PLD: Solar cells |
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| Authors: | AV Moholkar SS ShindeAR Babar Kyu-Ung SimHyun Kee Lee KY RajpurePS Patil CH BhosaleJH Kim |
| Affiliation: | a Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India b Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757, South Korea c Thin Film Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India |
| Abstract: | As-deposited and annealed Cu2ZnSnS4 (CZTS) thin films have been synthesized onto Mo coated glass substrates at different deposition times using pulsed laser deposition (PLD) technique. The effect of deposition time (film thickness) and annealing onto the structural, morphological, compositional and optical properties of CZTS thin films have been investigated. The polycrystalline CZTS thin films with tetragonal crystal structure have been observed from structural analysis. FESEM and AFM images show the smooth, uniform, homogeneous and densely packed grains and increase in the grain size after annealing. The internal quantitative analysis has been carried out by XPS study which confirms the stoichiometry of the films. The optical band gap of CZTS films grown by PLD is about 1.54 eV, which suggests that CZTS films can be useful as an absorber layer in thin film solar cells. Device performance for deposited CZTS films has been studied. |
| Keywords: | CZTS PLD Structural XPS Optical properties Device |
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