The correlation of the results of capacitance mapping and of sheet resistance mapping in semi-insulating 6H–SiC |
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| Authors: | Shenghuang Lin Zhiming Chen Peng Liang Dong Jiang Huajie Xie Ying Yang |
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| Affiliation: | 1. Institute of Semiconductor Technology, Braunschweig University of Technology, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany;2. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;3. Osram Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany;1. Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025, India;2. University of Tsukuba Tandem Accelerator Complex, University of Tsukuba, Tennodai 1-1-1, Ibaraki 305-8577, Japan;3. Department of Physics, MIT Campus, Anna University, Chennai 600044, India;4. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067, India;1. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;2. Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China;1. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland;2. School of Engineering, University College Cork, Cork, Ireland |
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| Abstract: | A combination of complex surface capacitance mapping and sheet resistance mapping is applied to establish the origin of resistance variations on semi-insulating (SI) 6H–SiC substrates. The direct correlation between the capacitance quadrature and the sheet resistance is found in vanadium-doped SI samples. Regions with low capacitance quadrature show high sheet resistance. This indicates, associated with the nonhomogeneity of sheet resistance on the substrate, that the quality of crystallization is not good enough, which also leads to resistivity nonhomogeneity when comparing with different types of deep defects. According to the capacitance mapping, the region with bad crystallization quality has a high radio absorption coefficient. Another correlation is established between the capacitance in-phase and sheet resistance for the vanadium-doped sample. In this sample, the capacitance in-phase map shows not only the surface topography, but also the same distribution trend as the sheet resistance, namely, regions of high capacitance in-phase reveal high sheet resistance. |
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