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Formation of shallow junctions in gallium and phosphorus compensated silicon for cell performance improvement
Authors:Peng Chen  Xuegong Yu  Lin Chen  Deren Yang
Affiliation:State Key Lab of Silicon Materials and Department of Materials Science & Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
Abstract:
Keywords:Solar cell  Czochralski silicon  Gallium and phosphorus compensated  Quantum efficiency
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