介电泳抛光方法及其电极形状的实验研究

目的验证介电泳抛光方法的有效性,研究电极形状对介电泳抛光方法均匀性、抛光效率和去除率的影响。方法选取直径76.2 mm的单晶硅片为实验对象,进行传统化学机械抛光(CMP)实验和使用4种电极形状的介电泳抛光实验,每隔30 min测量硅片不同直径上的表面粗糙度以及硅片的质量,然后对测量的数据进行处理和分析。结果与传统CMP方法比较,使用介电泳抛光方法抛光的硅片,不同直径上的表面粗糙度相差小,粗糙度下降速度快,使用直径60 mm圆电极形状介电泳抛光时相差最小,粗糙度下降最快。介电泳抛光方法去除率最低能提高11.0%,最高能提高19.5%,最高时所用电极形状为内径70 mm、外径90 mm的圆环。结论介电泳抛光方法抛光均匀性、效率和去除率均优于传统CMP方法。

Experimental Study on Dielectrophoresis Polishing and Shape of Electrode

Objective To demonstrate the effectiveness of dielectrophoresis polishing method (DPM) and the effect of the electrode shape on uniformity, efficiency and to investigate the removal rate. Methods The 76. 2 mm-diameter monocrystalline silicon wafer was polished by CMP and DPM. The surface roughness of different positions on wafer and quality of wafer were measured every 30 minutes. The measured values were processed and analyzed. Results Compared with CMP, the difference of surface roughness between different positions on wafer polished by DPM was less and the roughness decreased more quickly, and the difference was the least and the roughness decreased in the fastest speed when the circle electrode of 60 mm in diameter was used. The removal rate of DPM was enhanced by 11. 0% ~19. 5% when the annulus electrode of 70 mm in inner diameter and 90 mm in external diameter was used. Conclusion The uniformity, efficiency and removal rate of DPM were superior to CMP.