| 多孔硅和硅纳米线的减反性能对比研究 |
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| 引用本文： | 郭萍,孙凤梅,张渊,夏兵.多孔硅和硅纳米线的减反性能对比研究[J].表面技术,2012(5):22-24. |
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| 作者姓名： | 郭萍 孙凤梅 张渊 夏兵 |
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| 作者单位： | 南京信息职业技术学院;南京林业大学 |
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| 基金项目： | 国家自然科学基金资助项目(31000164);南京信息职业技术学院基金课题(YKJ10-016) |
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| 摘 要： | 基于单晶硅材料,通过阳极电化学腐蚀法制得多孔硅材料,通过湿化学刻蚀法制得硅纳米线材料,经过空气等离子体氧化处理后,采用扫描电子显微镜、傅里叶红外光谱仪对样品的化学组分以及表面微观结构进行了表征。最后对多孔硅和硅纳米线材料的减反效果进行对比,结果表明,硅纳米线具有更优越的减反效果。
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| 关 键 词： | 多孔硅 硅纳米线 光伏电池 减反性能 |
| 收稿时间： | 2012/5/18 0:00:00 |
| 修稿时间： | 2012/10/20 0:00:00 |
Comparative Study on Anti-reflection Effect between Porous Silicon and Silicon Nanowires |
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| GUO Ping,SUN Feng-mei,ZHANG Yuan and XIA Bing.Comparative Study on Anti-reflection Effect between Porous Silicon and Silicon Nanowires[J].Surface Technology,2012(5):22-24. |
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| Authors: | GUO Ping SUN Feng-mei ZHANG Yuan and XIA Bing |
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| Affiliation: | 1.Nanjing College of Information Technology,Nanjing 210046,China; 2.Nanjing Forestry University,Nanjing 210037,China) |
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| Abstract: | By anode electrochemical etching or wet chemical etching, porous silicon and silicon nanowires were prepared, respectively. After oxidation by air plasma, these two samples were characterized by scanning electron microscope, infrared spectrum. Finally, the antireflection effect of porous silicon and silicon nanowires were measured, which indicated silicon nanowires had better anti-reflection effect. |
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| Keywords: | porous silicon silicon nanowires photovoltaic cells anti-reflection effect |
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