基于磁流变技术的微孔内壁抛光装置研制及性能研究

目的基于磁流变技术研制适用于微孔内壁抛光的装置。方法利用磁流变抛光液的性质,借鉴传统的抛光原理,设计并研制了适用于微孔内壁抛光的抛光装置,并对该装置进行了一系列的性能研究。基于该微孔内壁抛光装置对多孔镍样品及平片硅样品进行了不同条件下的抛光研究,并对抛光结果进行了分析。结果此抛光装置的性能研究结果表明,该装置产生的交变磁场均匀、稳定,符合模拟预期,可用于进一步的样品抛光研究。利用此抛光装置,虽然在多孔镍样品的抛光上没有较为明显的效果,但平片硅样品的粗糙度却由1.24 nm下降至0.56 nm,具有较大改善。在平片硅样品的抛光研究中,进一步发现随着时间的增加,其粗糙度不断下降。结论自行搭建的基于磁流变技术的微孔内壁抛光装置可对平片硅进行抛光。

Development and Performance of Equipment for Polishing Inside Walls of Micro-holes Based on Magnetic-field-assisted Polishing Technology

The work aims to develop equipment for polishing inside walls of micro-holes based on magnetic-field-assisted polishing technology. The polishing equipment applicable to inside walls of micro-holes was designed and developed by utilizing properties of magnetic-field-assisted polishing solution and drawing on traditional polishing theory. Based upon this polishing equipment, a series of performance studies were performed to the equipment. Polishing studies were applied to porous nickel samples and normal silicon wafers under different conditions, and polishing results were analyzed. Performance study results of the polishing equipment showed that stable gradient alternating magnetic field was generated by the equipment, which coincided with our expectation and could be used for further studies of sample polishing. Though the equipment had no obvious effect on polishing of porous nickel samples, the roughness of silicon wafers decreased from 1.24 nm to 0.56 nm. Polishing studies of silicon wafers showed that the roughness decreased as time advanced. The self-made equipment for polishing inside walls of micro-holes based on magnetic-field-assisted polishing technology can be used for polishing silicon wafers. The relationship between polishing effect and magnetic field control parameters can be explored subsequently, and the polishing equipment can be applied to polishing of samples with micro-hole structure step by step.