| 真空蒸镀多晶硅薄膜工艺对其组织和性能的影响 |
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| 引用本文： | 曹健,王宙,室谷贵之.真空蒸镀多晶硅薄膜工艺对其组织和性能的影响[J].表面技术,2011,40(2):83-85. |
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| 作者姓名： | 曹健 王宙 室谷贵之 |
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| 作者单位： | 大连大学,表面工程中心,大连,116622;大连大学,表面工程中心,大连,116622;大连大学,表面工程中心,大连,116622;大连大学,表面工程中心,大连,116622 |
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| 摘 要： | 采用真空蒸镀并退火的方法制备多晶硅薄膜,采用透射电子显微镜对退火前后的样品进行了表征,通过原子力显微镜观察了薄膜的形貌,并测试了薄膜的耐压性能,分析了基板温度、基板距离和退火工艺对薄膜组织和性能的影响.实验结果表明:真空蒸镀所得薄膜为非晶硅薄膜,退火处理可使其多晶化,晶粒尺寸达0.5μm;基板温度120℃、基板距离60...
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| 关 键 词： | 真空蒸镀 退火 多晶硅薄膜 |
Effect of Process of Polycrystalline Silicon Thin Films Prepared by Vacuum Evaporation on Organization and Performance |
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| CAO Jian,WANG Zhou,Takayuki Murotani,FU Chuan-qi.Effect of Process of Polycrystalline Silicon Thin Films Prepared by Vacuum Evaporation on Organization and Performance[J].Surface Technology,2011,40(2):83-85. |
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| Authors: | CAO Jian WANG Zhou Takayuki Murotani FU Chuan-qi |
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| Affiliation: | CAO Jian,WANG Zhou,Takayuki Murotani,FU Chuan-qi(Surface Engineering Center,Dalian University,Dalian 116622,China) |
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| Abstract: | Polycrystalline silicon thin films were prepared by vacuum evaporation and annealing.The samples after annealing were characterized by TEM.The morphology of the films was observed by AFM.And the pressure-resisting performance was tested.The influence of substrate temperature,substrate distance and annealing process on poly-Si thin film was discussed.Results indicate that thin films obtained by vacuum evaporation are amorphous and can be crystallized by annealing into those of 0.5 μm grain size;Optimum conditions are substrate temperature of 120 ℃ and substrate distance of 60 mm.The pressure-resisting value can reach 384.2 V. |
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| Keywords: | vacuum evaporation annealing polycrystalline silicon thin film |
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