掺硼和掺磷的氢化纳米硅薄膜及其应用于类叠层太阳电池的研究

采用射频等离子体增强化学气相沉积法,制备了掺硼和掺磷的氢化纳米硅薄膜(nc-Si∶H),并将其应用于纳米硅薄膜类叠层太阳电池中。分析了薄膜样品的光学性能及表面形貌,结果表明:P型掺硼纳米硅薄膜的光学带隙为2.189 eV,电导率为8.01 S/cm,霍尔迁移率为0.521 cm2/(V.S),载流子浓度为9.61×1019/cm3;N型掺磷纳米硅薄膜的光学带隙为1.994 eV,电导率为1.93 S/cm,霍尔迁移率为1.694 cm2/(V.S),载流子浓度为7.113×1018/cm3;两者的晶粒尺寸都在3～5 nm之间,晶态比都在35%～45%之间,并且颗粒沉积紧密,大小比较均匀。制备了大小为20 mm×20 mm,结构为Al/AZO/p-nc-Si∶H/i-nc-Si∶H/n-nc-Si∶H/p-nc-Si∶H/i-nc-Si∶H/n-c-Si/Al背电极的纳米硅薄膜类叠层太阳电池,通过I-V曲线测试,其VOC达到544.3 mV,ISC达到85.6 mA,填充因子为65.7%。

The Research of Boron-doped and Phosphorus-doped Nanocrystalline Silicon Films and Application in Analogue Tandem Solar Cells

Boron-doped and phosphorus-doped thin films ( nc-Si : H) were deposited by RF-PECVD system and applied to fabricate analogue tandem solar cells. The optical performance and morphology of the thin film sample were analyzed. The results showed that the optical band gap, conductivity, hall mobility and carrier concentration of P-type nc-Si : H thin films were 2 . 189 eV, 8 . 01 S / cm, 0 . 521 cm²/ ( V·S) and 9 . 61 X10¹⁹/ cm³, respectively and those of N-type nc-Si : H thin films were 1 . 994 eV,1 . 93 S / cm, 1 . 694 cm²/ ( V·S) and 7 . 113 X10¹⁸/ cm³, respectively. Nanocrystalline grain size was approximate 3 ~5 nm and crystal volume fraction was within 35 % ~ 45 % . The grain deposition was density and it had more uniform size. The analogue tandem solar cells with the structure of Al / AZO / p-nc-Si : H / i-nc-Si : H / n-nc-Si : H / p-nc-Si : H / i-nc-Si : H / n-c-Si / Al were prepared in an area of 20 mmX20 mm and achieved the maximum open-circuit voltage V_OC, short-circuit current I_SC and fill factor of 544 . 3 mV, 85 . 6 mA and 65 . 7 % , respectively.