ZnO:Si透明导电薄膜厚度对其光电性能的影响

目的研究ZnO∶Si薄膜厚度对其生长速率、结晶度、光透率和电阻率的影响。方法用直流磁控溅射系统在玻璃基片上沉积不同的时间,获得5个厚度不同的ZnO∶Si薄膜样品,对比研究了其薄膜生长取向和结构特性、微观形貌、电学参数及透过率曲线。结果 5个ZnO∶Si薄膜样品都为多晶膜,具有单一的(002)衍射峰,沿垂直于基片的c轴方向择优生长。当薄膜厚度从207.6 nm增加到436.1 nm时,薄膜的晶粒尺寸增大,晶化程度提高,电阻率变小;膜厚增至497.8 nm时,薄膜的晶化程度反而降低,电阻率增加。在可见光范围内,5个薄膜样品的平均透过率都高于91.7%。结论膜厚对ZnO∶Si薄膜的电学性能有较大影响,对光学性能的影响则较小。

Impact of Film Thickness on Photoelectric Properties of Transparent Conductive Silicon Doped ZnO Thin Films

Objective To investigate the effect of the film thickness on the growth rate, crystallinity, light transmission and resistivity of ZnO:Si films. Methods Five samples with different thicknesses of ZnO:Si films were obtained on glass substrates by means of direct current magnetron sputtering system with different deposition time. Comparatively studies were carried out on growth orientations, structural characteristics, surface morphologies, electrical parameters and light transmission curves of these films. Results The results showed that all 5 samples were polycrystalline films with preferred orientation of (002) along the c-axis perpendicular to the substrate. When the film thickness increased from 207. 6 nm to 436. 1 nm, the grain size of films increased, the level of crystallinity increased, and the resistivity decreased, however, when the film thickness further increased from 436. 1 nm to 497. 8 nm, the degree of crystallization decreased and the resistivity increased. The average transmittance of all 5 samples was higher than 91. 7% in the visible light range. Conclusion Therefore, the film thickness strongly affected the electrical properties of ZnO:Si thin film, and had less impact on its optical transmittance.