| 晶体生长的初始成分过渡区 |
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| 引用本文： | 李言祥,柳百成.晶体生长的初始成分过渡区[J].金属学报,1988,24(1):82-86. |
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| 作者姓名： | 李言祥 柳百成 |
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| 作者单位： | 清华大学机械工程系，清华大学机械工程系 教授 |
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| 摘 要： | 本文讨论晶体单向平面生长时,初始过渡阶段的溶质分布.给出了初始过渡阶段固—液界面前沿液相中的溶质浓度分布表达式;提出了缩短初始过渡区长度的方法;确定了最短过渡区长度的极限;找出了实现最短过渡区所要求的速度函数.
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| 关 键 词： | 晶体生长 溶质分布 成分过渡区 |
| 收稿时间： | 1988-01-18 |
| 修稿时间： | 1988-01-18 |
INITIAL COMPOSITION TRANSIENT DURING CRYSTAL GROWTH |
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| LI Yanxiang,LIU Baicheng.INITIAL COMPOSITION TRANSIENT DURING CRYSTAL GROWTH[J].Acta Metallurgica Sinica,1988,24(1):82-86. |
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| Authors: | LI Yanxiang LIU Baicheng |
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| Affiliation: | LI Yanxiang,LIU Baicheng Department of Mechanical Engineering,Tsinghua University,Beijing |
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| Abstract: | The solute distribution in the initial transient during unidirectionalplanar crystal growth has been studied. An expression of solute distributionin liquid phase near liquid-solid interface at the initial growth stage was derived.A method for reducing the length of initial transient was put forward and theshortest initial transient length was determined. The growth velocity function re-quired for realizing the shortest transient length at the initial stage was then ob-tained. |
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| Keywords: | crystal growth solute distribution composition transient |
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