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用临界钝化电流法和液晶法检测金属氧化物膜的缺陷率
引用本文:印仁和,曹为民,李亚君,李卓棠,荣国斌.用临界钝化电流法和液晶法检测金属氧化物膜的缺陷率[J].金属学报,1997,33(6):667-672.
作者姓名:印仁和  曹为民  李亚君  李卓棠  荣国斌
作者单位:[1]上海大学 [2]华东理工大学
基金项目:国家自然科学基金!59471060
摘    要:用临界钝化电流法和液晶法,研究了不锈钢上Ta2O5,ZrO2的高频溅射膜的缺陷率,建立了CPCD法中与薄膜有关的电流密度If与膜厚d之间的关系式:If=k(1-θ)^d,利用液晶的动态散射模型建立了动态无损伤检测膜缺陷率的新方法,并证明了这两种方法的检测结果有良好的直线关系。

关 键 词:临界钝化电流法  液晶法  氧化物  薄膜  缺陷率
收稿时间:1997-06-18
修稿时间:1997-06-18

THE INSPECTION OF DEFECTS IN METAL OXIDE FILMS BY CPCD AND LIQUID CRYSTAL METHODS
YIN Renhe,CAO Weimin,LI Yajun LI Zhuotang RONG Guobin.THE INSPECTION OF DEFECTS IN METAL OXIDE FILMS BY CPCD AND LIQUID CRYSTAL METHODS[J].Acta Metallurgica Sinica,1997,33(6):667-672.
Authors:YIN Renhe  CAO Weimin  LI Yajun LI Zhuotang RONG Guobin
Affiliation:YIN Renhe,CAO Weimin,LI Yajun(The Electrochemical Research Center,ShanghaiUniversity,Shanghai ) LI Zhuotang (Deportment of Materials,Shanghai University)) RONG Guobin (East China University of Science and Technology)
Abstract:The defects in Ta2O5 and ZrO2 films prepared by RF sputtering on SUS304stainless steel were studied by CPCD (critical passivation current density) and liquid crystalmethods. In CPCD method a relation between current density if and film thickness wasgiven: If= K(1-0)d. Using DSM (dynamic scattering mode) of liquid crystal, a new methodabout nondestructive testing of film defects was reported. The results of the two methodsshowed a good linear relation.
Keywords:CPCD method  DSM  liquid crystal  oxide film  defect
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