| CH_4离子束增强沉积对TiC薄膜显微硬度的影响机制 |
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| 引用本文： | 刘长洪,李文治,李恒德.CH_4离子束增强沉积对TiC薄膜显微硬度的影响机制[J].金属学报,1994,30(19):318-322. |
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| 作者姓名： | 刘长洪 李文治 李恒德 |
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| 作者单位： | 清华大学 |
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| 基金项目： | 国家自然科学基金,国家科委八六三项目 |
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| 摘 要： | 研究了双离子束沉积ＴｉＣ薄膜的形成．离子束反应溅射膜的显微硬度比ＣＨ_４高子束增强沉积膜的显微硬度高．ＸＰＳ，ＴＥＭ和ＡＥＳ分析表明后者硬度低的一个重要原因是ＣＨ_４离子束轰击引入过量的自由碳原子．
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| 关 键 词： | TiC薄膜，离子束增强沉积，硬度 |
INFLUENCE OF CH_4 ION BEAM ENHANCED DEPOSITION ON HARDNESS OF TiC FILMS |
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| LIU Changhong,LI Wenzhi,LI Hengde.INFLUENCE OF CH_4 ION BEAM ENHANCED DEPOSITION ON HARDNESS OF TiC FILMS[J].Acta Metallurgica Sinica,1994,30(19):318-322. |
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| Authors: | LIU Changhong LI Wenzhi LI Hengde |
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| Affiliation: | LIU Changhong,LI Wenzhi,LI Hengde (Tsinghua University,Beijing) |
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| Abstract: | Synthesis of TiC films was investigated by dual ion beam deposition. Higher Knoop hardness number on the TiC films prepared by CH_4 ion beam enhanced deposition as comparison with that without CH_4 was obtained. The important reason, which showed by XPS, TEM and AES analyses, may be due to the excess C introduced to the TiC films during ion beam bombardment. |
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| Keywords: | TiC film ion beam enhanced deposition hardness |
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