中频对靶磁控溅射合成TiN/Ti多层膜

利用新型中频对靶磁控溅射技术合成了一系列TiN／Ti多层膜．考察了不同Ti间隔层对多层膜硬度和结合力的影响，分析了膜表面大颗粒和坑的形成机理；利用正交实验法和方差分析探讨了靶电流、气体压力和基体偏压对薄膜表面缺陷密度的影响，对工艺参数进行了优化．结果表明，靶电流对缺陷密度的影响最大，气体压力次之，基体偏压对缺陷密度影响最小；当靶电流I=20A、气体压力ρ（Ar＋N2）=0．31Pa、基体偏压Vbias=-16m--300V和Ti间隔层厚度x-=0．12μm时，制备出硬度HV0．2N=2250、膜基间结合力（临界载荷）Lc=48N和表面缺陷密度ρs=58mm^-2的高质量TiN／Ti多层膜．

TiN/Ti MULTILAYER FILMS SYNTHESIZED BY MID-FREQUENCY DUAL-MAGNETRON SPUTTERING

A series of Ti-based multilayered films were deposited using a new mid-frequency dual-magnetron sputtering system. The influences of Ti buffer layer on the film hardness and adhesion were investigated. The forming mechanism of macro-particles and caves was analyzed, and then the orthogonal design and variance analysis were used to discuss the influences of the target currents, the pressures of working gases and the substrate bias voltages on the densities of the surface defects, and the process parameters were optimized accordingly. The results show that the target current has the most important influence on the defect density, and the effects of the pressures and the substrate bias voltages decrease in turn; in the condition of the target current of 20 A, the gases pressure of 0.31 Pa, the bias voltages in a range of -160 - -300 V and the thickness of Ti buffer layers, x=0.12 um, the high-quality TiN/Ti multilayer film is obtained, whose Vickers microhardness HV 0.2 N is 2250, film-substrate adhesion (critical load L c) is 48 N, and surface defect density is 58 mm -2.