脉冲电压幅值对等离子体化学气相沉积TiN薄膜膜基结合行为的影响

用工业型脉冲等离子体化学（ＰＣＶＤ）设备。在高速钢（Ｗ１８Ｃｒ４Ｖ）和钴基硬质合金ＳＣ３０基材表面沉积了ＴｉＮ薄膜，用扫描电镜（ＳＥＭ）和连续加载压入仪研究了脉冲电压幅值对膜基结合行为的影响，结果表明：随脉冲电压在５５０－７５０Ｖ之间逐渐增大，ＴｉＮ晶粒增大，膜层脆性增加，沉积速率提高。但膜层结合力下降：在６５０Ｖ以下膜基界面有一伪扩散层出现，通过６５０Ｖ后伪散层消失，这是改善膜基结合行为的关键因

EFFECT OF PULSED VOLTAGE ON INTERFACIAL BONDING BEHAVIOR OF TiN COATINGS PREPARED BY PULSED DC PLASMA CHEMICAL VAPOR DEPOSITION

Using an industrial type set--up of pulsed DC plasma chemical vapor deposition the TiN coatings on high speed steel (W18Cr4V) and cemented carbide SC30 was performed. The effect of pulsed voltage on interfacial bonding behavior of TiN coatings was investigated by scanning electron microscopy (SEM) and continual loading indentation test. The results show that when the pulsed voltage increased from 550 V to 750 V, the grain size, the coatings brittleness and deposition rate of TiN coatings increase, but the interfacial bonding strength decreases obviously when higher voltage (>650 V) was used. A pseudodiffusion zone between the substrate and the coating was observed when the pulsed voltage below 650 V was used. This could be a critical effect on improving interfacial bonging strength of TiN coatings. The formation mechanism of pseudo--diffusion zone was discussed.