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| FUNDAMENTAL PROBLEMS IN PULSED-BIAS ARC DEPOSITION | |
| 作者姓名： | G.Q. Lin Z.F. Ding D. Qi N.H. Wang M.D. Huang D.Z. Wang Y.N. Wang C. Dong L.S. Wen |
| 作者单位： | G.Q. Lin，Z.F. Ding，D. Qi，N.H. Wang，M.D. Huang，D.Z. Wang，Y.N. Wang，C. Dong and L.S. Wen The State Key Laboratory for Materials Modification by Laser，Ion and Electron Beams，Dalian University of Technology，Dalian 116024，China Depa |
| 基金项目： | This work was supported by the National Natural Science Foundation of China (Grant No.50071017). |
| 摘 要： | Arc deposition, a widely used surface coating technique, has disadvantages such as large droplet size and high deposition temperature. Recent trend in its renovation is the introduction of pulsed bias at the. substrate. The present paper attempts to describe the deposition process of TiN films using this technique with emphasis laid on the understanding of the basic problems such as discharge plasma properties, temperature calculation, and droplet size reduction. We show that this technique improves the film micro structure and quality, lowers deposition temperature, and allows coatings on insulating substrates. After analyzing load current oscillation behaviors, we have determined that the plasma load is of capacitance nature due to plasma sheath and that it is equivalent to a circuit element consisting of parallel capacitance and resistance. At last, we point out the remaining problems and future development of the pulsed-bias arc deposition technique. |
| 收稿时间： | 2001-07-31 |
| 修稿时间： | 2001-09-25 |
FUNDAMENTAL PROBLEMS IN PULSED-BIAS ARC DEPOSITION |
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| G.Q. Lin ,Z.F. Ding , D. Qi , N.H. Wang ,M.D. Huang ,D.Z. Wang , Y.N. Wang ,C. Dong ,L.S. Wen.FUNDAMENTAL PROBLEMS IN PULSED-BIAS ARC DEPOSITION[J].Acta Metallurgica Sinica(English Letters),2002,15(1):91-103. | |
| Authors: | GQLin ZFDing DQi NHWang MDHuang DZWang YNWang CDONG LSWen |
| Affiliation: | 1. The State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian Uni-versity of Technology, Dalian 116024, China 2. Department of Electromagnetic Engineering, Dalian University of Technology, Dalian 116024, China 3. The State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian Uni-versity of Technology, Dalian 116024, China;Institute of Metals Research, The Chinese Academy of Sciences, Shenyang 110016, China 4. Institute of Metals Research, The Chinese Academy of Sciences, Shenyang 110016, China |
| Abstract: | Arc deposition, a widely used surface coating technique, has disadvantages such as large droplet size and high deposition temperature. Recent trend in its renovation is the introduction of pulsed bias at the. substrate. The present paper attempts to describe the deposition process of TiN films using this technique with emphasis laid on the understanding of the basic problems such as discharge plasma properties, temperature calculation, and droplet size reduction. We show that this technique improves the film micro structure and quality, lowers deposition temperature, and allows coatings on insulating substrates. After analyzing load current oscillation behaviors, we have determined that the plasma load is of capacitance nature due to plasma sheath and that it is equivalent to a circuit element consisting of parallel capacitance and resistance. At last, we point out the remaining problems and future development of the pulsed-bias arc deposition technique. |
| Keywords: | arc deposition pulsed bias plasma |
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