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PREPARATION AND STRVCTURAL EVOLUTION OF TiO_2 THINFILMS BY LOW PRESSURE MOCVD
摘    要:1. IntroductionTitanium dioxide (TiO2) films are widely used for electrical and optical applications because of its high dielectric constant, its chemical stability and its high refractive i.de.1--2].Tioz thin films can be prepared by various thin film deposition techniquesl3--8]. Amongthese techniques, chemical vapor deposition (CVD) is considered as a useful method to deposit high quality thin films with large area uniformity and well--controlled stoichiometry.Crystalline TiOZ exists th…

收稿时间:2000-12-25
修稿时间:2000-12-25

PREPARATION AND STRVCTURAL EVOLUTION OF TiO_2 THIN FILMS BY LOW PRESSURE MOCVD
Authors:WJ Li  ZM Wu  JF Zhao  ZH Wu  XLZhao and BC Cai
Affiliation:W.J. Li,Z.M. Wu,J.F. Zhao,Z.H. Wu,X.L.Zhao and B.C. Cai ( Information Storage Research Center,Shanghai Jiaotong University,Shanghai,China,College of Chemical Engineering & Technology,Taiyuan University of Technology,Taiyuan,China)
Abstract:Titanium dioxide thin films were prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from titanium IV isopropoxide. Nitrogen was used as a carrier gas for the titanium precursor,and oxygen as a reactant gas. The deposition rates of the films have been studied as functions of process parameters such as sabstrate temperature and oxygen flow rote. Structural evolution of the films has been studied as functions of substrate temperature (110 to 700℃) and annealing temperature. The films have been characterized by X-ray dissection and by Raman scattering. Films deposited onto Si(100) substrates were amorphous at 110-250℃, anatase at 350- 550℃ and rutile above 650℃. The films deposited at substrate temperatures less than 550℃ and annealed at 600℃ for two hours were annealed, annealed at 700℃ for two hours were mixtures of anatase and rutile, and annealed at 850℃ for two hours were rutile.
Keywords:MOCVD  deposition  titanium dioxide  thin film  structural property
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