Evaluation of stress during and after sputter deposition of Cu and Ta films |
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Authors: | AA Navid AM Hodge |
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Affiliation: | a University of Southern California, Aerospace and Mechanical Engineering Department, Los Angeles, CA 90089, USAb Division of Engineering, Brown University, Providence, RI 02912, USA |
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Abstract: | The stress evolution of magnetron sputtered copper and tantalum films is presented for samples prepared at various sputtering pressures and powers. In-situ stress values were calculated using measurements from a Multi-beam Optical Stress Sensor (MOSS) system, while ex-situ stress values were calculated using measurements from a stylus profilometer. Extensive microstructural and surface analysis were performed by several techniques and related to the stress state of the film. The results demonstrate that during deposition, independent of the adatom mobility, the stress curves are initially compressive at low sputtering pressures, while at the highest sputtering pressure (1.4 Pa) the stress trend is always tensile. Meanwhile, the stress curves after deposition show a tensile trend for both materials at all sputtering pressures. |
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Keywords: | Magnetron sputtering Residual stress Copper Tantalum |
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