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化学气相沉积钨单晶管材表面电解蚀刻形成的{110}晶面形貌
引用本文:吴尉,杨启法,郑剑平.化学气相沉积钨单晶管材表面电解蚀刻形成的{110}晶面形貌[J].物理测试,2003,7(5):4-6,16.
作者姓名:吴尉  杨启法  郑剑平
作者单位:中国原子能科学研究院
摘    要:报导了具有<111>晶向(轴向)的管状钼单晶基体化学气相沉积(CVD)钨单晶涂层的电解蚀刻工艺及形成的{110}晶面形貌。实验发现,通过电解蚀刻,表面的{110}晶面可以完全被蚀刻出来。蚀刻出来的{110}晶面呈台阶结构,并同<111>晶轴相平行。蚀刻出来的{110}晶面在圆管的表面分成均等六个区。每个区内{110}晶面的台阶面的宽度呈现周期性的变化,开始台阶面较宽,逐渐变窄,然后通过一过渡区后,进入下一周期,{110}晶面的台阶面的宽度又逐渐变宽。

关 键 词:钨单晶涂层  电解蚀刻  化学气相沉积  {110}晶面  热离子能量转换器  电真空器件

THE MORPHOLOGY OF {110} PLANE FORMED BY ELECTRIC ECTHING TECHNOLOGY ON THE CVD TUNGSTEN CRYSTALLINE COATING SURFACE
WU Wei YANG Qifa ZHENG Jianping.THE MORPHOLOGY OF {110} PLANE FORMED BY ELECTRIC ECTHING TECHNOLOGY ON THE CVD TUNGSTEN CRYSTALLINE COATING SURFACE[J].Physics Examination and Testing,2003,7(5):4-6,16.
Authors:WU Wei YANG Qifa ZHENG Jianping
Affiliation:China Institute of Atomic Energy
Abstract:The electric etching technology for preparing the {110} planes of CVD tungsten coating surface with <111> crystalline orientation and formed morphology of {110} planes on the CVD tungsten coating surface are presented. It was found that the {110} planes showed step structure on the cylindered sample surface and they paralleled with <111> crystalline orientation. The {110} planes are divided six regions. The step width of the (110) plane in every region is changed. At the beginning of every region the width of the plane is wide, then it gets small and small. After a transition area, the plane is into an-ther region and becomes wide again.
Keywords:chemical vapor deposition  tungsten coating  electric etching  {110} planes
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