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  利用磁过滤阴极电弧镀在硬质合金上沉积厚度约2~3 μm的TiAlN薄膜，并用MEVVA源离子对TiAlN薄膜注入金属离子V+和Nb+。应用北京同步辐射装置（BSRF）的同步辐射光源，采用掠入射X射线衍射（GIXRD）的方法对TiAlN薄膜表面离子注入层的微观结构进行分析研究。结果表明：未经过离子注入的TiAlN薄膜主要组成相是没有择优取向的Ti3AlN伴有少量AlN，而较小剂量(1×1017 ions/cm2)的离子注入都可以使Ti3AlN产生（111）上的择优取向和细化晶粒，且AlN消失；当离子注入的剂量达到5×1017 ions/cm2时，注入V+的Ti3AlN择优取向变为（210），并产生TiN相；注入Nb+ 的各个衍射峰完全消失，说明TiAlN薄膜表面离子注入层被非晶化，结合透射电镜的研究结果，观察到非晶层的厚度约为80~100 nm。

Study on Implanted TiAlN Films by Synchrotron Radiation Grazing Incident X-Ray Diffraction

The synchrotron radiation grazing incident X-ray diffraction(GIXRD) method was applied to analyze the microstructure of the TiAlN films,which was implanted with V+ and Nb+ by MEVVA at different dosages after deposited on the cemented carbide(WC-Co) by Magnetic Filter Arc Ion Plantation into 2～3 μm.The result shows that: the principal phase in the TiAlN film without implantation is the un-preferred orientation Ti3AlN with a small amount of AlN.Nevertheless,when implanted with minor dosage(1×1017 ions/cm2),the grain would be refined and preferred orientation in crystal face(111) arises,while AlN disappears,when the dosage reaches 5×1017 ions/cm2,the preferred orientation turns into(210) implanted with V+,and a considerable amount of TiN emerges with Nb+,all the peaks completely vanish,combining with the TEM result,it is observed that the thickness of amorphous is about 80～100 nm.