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| Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films | |
| 作者姓名： | LI Li FANG Liang CHEN Ximing LIU Gaobin LIU Jun YANG Fengfan FU Guangzong KONG Chunyang |
| 作者单位： | LI Li1)，FANG Liang2)，CHEN Ximing1)，LIU Gaobin2)，LIU Jun1)，YANG Fengfan2)，FU Guangzong2)，and KONG Chunyang3) 1) College of Photoelectric Engineering，Chongqing University of Posts and Telecommunications，Chongqing 400065，China 2) Department of Applied Physics，Chongqing University，Chongqing 400044，China 3) Department of Physics，Chongqing Normal University，Chongqing 400047，China |
| 基金项目： | 新世纪优秀人才支持计划;重庆市科学技术委员会重点攻关项目;重庆市自然科学基金;中国博士后科学基金;重庆大学校科研和教改项目 |
| 摘 要： | Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 ℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering. |
| 关 键 词： | AZO薄膜 结构特性 光电性质 透光率电阻率 退火 |
| 收稿时间： | 20 February 2006 |
| 修稿时间： | 2006-02-20 |
Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films |
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| LI Li FANG Liang CHEN Ximing LIU Gaobin LIU Jun YANG Fengfan FU Guangzong KONG Chunyang.Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films[J].Rare Metals,2007,26(3):247-253. | |
| Authors: | LI Li FANG Liang CHEN Ximing LIU Gaobin LIU Jun YANG Fengfan FU Guangzong KONG Chunyang |
| Affiliation: | 1. College of Photoelectric Engineering. Chongqing University of Posts and Telecommunications, Chongqing 400065, China 2. Department of Applied Physics, Chongqing University, Chongqing 400044, China 3. Department of Physics, Chongqing Normal University, Chongqing 400047, China |
| Abstract: | Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 ℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering. |
| Keywords: | AZO thin films structure optical and electrical properties annealing transmittance spectra electrical resistivity |
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