| Preliminary Study on Electrical and Optical Properties of ZnO Film Grown by MOCVD |
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| 作者姓名： | 张兆春 黄柏标 于永芹 崔得良 秦晓燕 蒋民华 |
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| 作者单位： | Zhang Zhaochun，Huang Baibiao，Yu Yongqin，Cui Deliang Qin Xiaoyan and Jiang Minhua (秦晓燕) (蒋民华) Institute of Crystal Materials，Shandong University，Jinan 250100，China |
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| 摘 要： | 1 ＩｎｔｒｏｄｕｃｔｉｏｎＺｎＯｉｓａｗｉｄｅ ｇａｐ ( 3.2ｅＶａｔｒｏｏｍｔｅｍｐｅｒａｔｕｒｅ)ｓｅｍｉｃｏｎｄｕｃｔｏｒｍａｔｅｒｉａｌｈａｖｉｎｇｔｈｅｗｕｒｔｚｉｔｅｓｔｒｕｃｔｕｒｅｗｉｔｈｄｉｒｅｃｔｅｎｅｒｇｙｂａｎｄ .Ｉｔｈａｓｂｅｅｎｃｏｎｓｉｄｅｒｅｄａｓａｐｒｏｍｉｓ ｉｎｇｍａｔｅｒｉａｌｆｏｒｏｐｔｏｅｌｅｃｔｒｏｎｉｃｄｅｖｉｃｅｓｉｎｔｈｅｎｅａｒｕｌｔｒａｖｉｏｌｅｔ(ＵＶ)ａｎｄｂｌｕｅｓｐｅｃ ｔｒａ .ＡｎｉｎｔｅｒｅｓｔｉｎｇｆｅａｔｕｒｅｏｆＺｎＯｉｓｉｔｓｌ…
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Preliminary Study on Electrical and Optical Properties of ZnO Film Grown by MOCVD |
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| Zhang Zhaochun,Huang Baibiao,Yu Yongqin,Cui Deliang,Qin Xiaoyan,Jiang Minhua.Preliminary Study on Electrical and Optical Properties of ZnO Film Grown by MOCVD[J].Rare Metals,2000,19(3). |
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| Authors: | Zhang Zhaochun Huang Baibiao Yu Yongqin Cui Deliang Qin Xiaoyan Jiang Minhua |
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| Abstract: | ZnO films with low resistivity and high transmittance in the visible optical region were deposited on GaAs and glass substrates by MOCVD at atmospheric pressure using diethyl zinc and tetrahydrofuran as precursors.The X-ray diffraction results revealed that ZnO epilayer on GaAs showed good crystalline character and exhibited (002) orientation with the c-axis perpendicular to the substrate surface.The resistivity of ZnO films in the range from 10-3～10-2 Ω.cm was found to be dependent upon the initial partial pressure of diethyl zinc and tetrahydrofuran. |
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| Keywords: | ZnO MOCVD Resistivity Optical transmittance |
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