| A Possible Relationship between Schottky Barrier Heights and Adhesion Energies of Metal／Semiconductor or |
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| 引用本文： | 李建国.A Possible Relationship between Schottky Barrier Heights and Adhesion Energies of Metal／Semiconductor or[J].稀有金属(英文版),1994(1). |
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| 作者姓名： | 李建国 |
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| 作者单位： | Li Jianguo(李建国)(Technique University Berlin .Institute for Nichrmetallische Werkstoffe，Englische Str .20 .1000 Berlin 12 FRG ) |
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| 摘 要： | ＡＰｏｓｓｉｂｌｅＲｅｌａｔｉｏｎｓｈｉｐｂｅｔｗｅｅｎＳｃｈｏｔｔｋｙＢａｒｒｉｅｒＨｅｉｇｈｔｓａｎｄＡｄｈｅｓｉｏｎＥｎｅｒｇｉｅｓｏｆＭｅｔａｌ／ＳｅｍｉｃｏｎｄｕｃｔｏｒｏｒＩｎｓｕｌａｔｏｒＩｎｔｅｒｆａｃｅｓＬｉＪｉａｎｇｕｏ（李建国）...
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A Possible Relationship between Schottky Barrier Heights andAdhesion Energies of Metal / Semiconductor or Insulator Interfaces |
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| Li Jianguo.A Possible Relationship between Schottky Barrier Heights andAdhesion Energies of Metal / Semiconductor or Insulator Interfaces[J].Rare Metals,1994(1). |
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| Authors: | Li Jianguo |
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| Abstract: | A possible relationship between Schottky barrier heights and adhesion energies of different nonreactivemetal/semiconductor or insulator interfaces is presented .Various experimental evidences further sup-porting such a relationship are briefly exploited. The consequence indicated by such a relationship on the understanding of metal / ceramic interfaces is stressed. |
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| Keywords: | Schottky barrier heights Adhesion energies Metal/ semiconductorinterfaces |
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