450mm IC级硅单晶的制备

450mm直径的硅片面积比目前主流300mm硅片面积大2.25倍,是下一代半导体芯片的衬底。国外许多半导体设备和材料公司已联手开展这方面的研究工作。从技术和市场角度讨论分析了以下问题：①投料量和单晶收率的关系;②籽晶的承重;③设备安全性,防止一氯化硅粉尘的爆燃;④晶体质量的控制,从热场的选择和设计、缺陷控制、单晶体金属控制等方面做了分析;⑤对当前国内外相关原材料的市场情况进行了讨论。文章指出,现在国内直径450mm硅晶体生长的研发条件已经成熟。

Growth of 450mm CZ Si Single Crystal of IC Grade

450mm silicon wafer is the next generation of semiconductor substrate, the area of which is 2.25 times one’s of 300mm silicon wafer. Some famous international companies have been doing the RD on this project. Paper here analyses the problems that will be met during crystal growth from the view of the selection and design of hot zone, defect control, bulk metal contamination control etc. It is the right time to initiate research on 450mm silicon wafer in China.