| Er_2O_3掺杂对ZnO压敏电阻性能的影响 |
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| 引用本文： | 李宇翔,卢振亚,张兆生.Er_2O_3掺杂对ZnO压敏电阻性能的影响[J].稀有金属材料与工程,2009,38(Z2). |
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| 作者姓名： | 李宇翔 卢振亚 张兆生 |
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| 作者单位： | 华南理工大学,广东,广州,510640 |
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| 基金项目： | 广东省科技攻关项目，广州市科技攻关项目 |
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| 摘 要： | 研究了Er_2O_3掺杂对ZnO压敏电阻微观结构和电性能的影响.实验发现,在ZnO压敏电阻中加入Er_2O_3不仅可以提高压敏电压V1mA,同时还可改善非线性系数和漏电流特性.但过量的Er_2O_3将会使压敏电阻的耐大电流冲击特性劣化.微观结构和XRD图谱分析表明,Er_2O_3以一种化合物的形式存在于晶界,阻碍了晶界的运动,使材料烧结后具有较小的晶粒尺寸,并且粒径分布比较均匀.当Er_2O_3的添加量为0.8 mol%时,样品的压敏电压V1mA约为360 V/mm,非线性系数α达到86,并且在8/20 μs的耐大电流冲击能力的试验中,样品耐受冲击电流的峰值大于1.6 kA/cm~2.
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| 关 键 词： | Er_2O_3掺杂 ZnO压敏电阻 高电位梯度 耐电流冲击特性 |
Influence of Er_2O_3 Doping on Performance of ZnO Varistor |
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| Li Yuxiang,Lu Zhenya,Zhang Zhaosheng.Influence of Er_2O_3 Doping on Performance of ZnO Varistor[J].Rare Metal Materials and Engineering,2009,38(Z2). |
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| Authors: | Li Yuxiang Lu Zhenya Zhang Zhaosheng |
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| Affiliation: | Li Yuxiang,Lu Zhenya,Zhang Zhaosheng (South China University of Technology,Guangzhou 510640,China) |
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| Abstract: | The effect of Er2O3 on the microstructure and electrical properties was studied. It was found that Er2O3 doping can substantially increase the breakdown voltage and improve the nonlinear coefficient and leakage current. But excessive Er2O3 will decrease the withstanding surge current. The microstructure analysis and XRD patterns indicate that Er2O3 additive exists in ZnO grain boundary in the form of a new compound and hinders the movement of grain boundary,which reduces the size of ZnO grain and makes the ... |
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| Keywords: | Er_2O_3 doping ZnO varistor high breakdown voltage withstanding surge current |
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