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石墨烯/6H-SiC(0001)表面高质量USb2 薄膜的制备和表征
引用本文:王西洋,郝群庆,张云,潘启发,陈秋云,冯卫,王永欢,朱燮刚,罗丽珠,赖新春,刘琴,谭世勇.石墨烯/6H-SiC(0001)表面高质量USb2 薄膜的制备和表征[J].稀有金属材料与工程,2022,51(8):2721-2726.
作者姓名:王西洋  郝群庆  张云  潘启发  陈秋云  冯卫  王永欢  朱燮刚  罗丽珠  赖新春  刘琴  谭世勇
作者单位:表面物理与化学重点实验室,表面物理与化学重点实验室,表面物理与化学重点实验室,表面物理与化学重点实验室,表面物理与化学重点实验室,表面物理与化学重点实验室,表面物理与化学重点实验室,表面物理与化学重点实验室,表面物理与化学重点实验室,表面物理与化学重点实验室,表面物理与化学重点实验室,表面物理与化学重点实验室
基金项目:the National Key Research and Development Program of China (Grant No. 2017YFA0303104), the National Science Foundation of China (Grants No. 11904335, No. 11974319, No. 21903074, No. 11774320, 11904334, No. 12122409, No. 11874330), and the Special Funds of Institute of Materials (Grant No. TP02201905)
摘    要:重费米子体系可以通过维度等调控手段来展现出丰富而有吸引力的量子基态。首次通过分子束外延技术在石墨烯/6H-SiC(0001)衬底成功制备了高质量的USb2薄膜。结合反射式高能电子衍射、X射线衍射、电输运和X射线光电子能谱测量,证明了所制备的USb2薄膜是高质量的单晶薄膜。此外,利用扫描隧道显微镜和角分辨光电子能谱对USb2薄膜的表面形貌、原子结构和能带结构进行了表征。结果显示,生长的USb2薄膜的表面原子结构、电输运性质和能带结构与块体USb2单晶相似。最后,高质量USb2薄膜的成功制备和表征为未来通过生长理想厚度的超薄膜在低维铀基重费米子系统中探索奇妙性能提供了宝贵的实验经验。

关 键 词:USb2薄膜  扫描隧道显微镜  角分辨光电子能谱  电子结构
收稿时间:2022/1/18 0:00:00
修稿时间:2022/6/30 0:00:00

Preparation and Characterization of High-Quality USb2 Thin Films on Graphene/6H-SiC(0001)
Wang Xiyang,Hao Qunqing,Zhang Yun,Pan Qif,Chen Qiuyun,Feng Wei,Wang Yonghuan,Zhu Xiegang,Luo Lizhu,Lai Xinchun,Liu Qin and Tan Shiyong.Preparation and Characterization of High-Quality USb2 Thin Films on Graphene/6H-SiC(0001)[J].Rare Metal Materials and Engineering,2022,51(8):2721-2726.
Authors:Wang Xiyang  Hao Qunqing  Zhang Yun  Pan Qif  Chen Qiuyun  Feng Wei  Wang Yonghuan  Zhu Xiegang  Luo Lizhu  Lai Xinchun  Liu Qin and Tan Shiyong
Affiliation:Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;,Science and Technology on Surface Physics and Chemistry Laboratory;
Abstract:Heavy fermion systems can exhibit abundant attractive quantum ground states by tuning external parameters such as dimension. High-quality USb2 thin films were prepared on graphene/6H-SiC(0001) surface by molecule beam epitaxy. Combining the reflection high energy electron diffraction, X-ray diffraction, electric transport and X-ray photoelectron spectroscopy measurements, it is demonstrated that the grown USb2 films are high-quality single crystals. Furthermore, the surface topography, atomic structure and band structures of USb2 films were characterized by scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPS). Results show that the surface atomic structure, electric transport property and band structure of the grown USb2 films are similar to those of bulk USb2 single crystals. The preparation and characterization of high-quality USb2 films provide precious experimental experiences for exploring fantastic properties of low-dimensional uranium-based heavy fermion systems by growing ultrathin films with desirable thickness in the future.
Keywords:USb2 thin films  STM  ARPES  electronic structure
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