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ALD沉积HfO_2薄膜生长行为及其调控
引用本文:聂祥龙,马大衍,徐可为.ALD沉积HfO_2薄膜生长行为及其调控[J].稀有金属材料与工程,2015,44(11):2907-2912.
作者姓名:聂祥龙  马大衍  徐可为
作者单位:西安交通大学 金属材料强度国家重点实验室,陕西 西安 710049
基金项目:国家重点基础研究发展规划(“973”计划)(2010CB631002);国家自然科学基金资助(51171145)
摘    要:采用原子层沉积(ALD)的方法,选择四二乙基氨基铪(TDEAH)和水作为反应前驱体,在p型(100)单晶硅衬底上制备了HfO_2高介电质薄膜。系统研究了前驱体流量、反应气压、反应温度等工艺参数对HfO_2薄膜生长质量的影响。通过工艺调控,发现存在两种薄膜生长模式:类CVD(化学气相沉积)生长模式和ALD生长模式。发现薄膜的生长模式主要依赖于制备工艺参量:脉冲参量M和冲洗参量Q,通过优化工艺参数,可实现薄膜生长由类CVD生长模式向ALD生长模式的转变,并获得了0.1 nm/周次的最优薄膜生长速率。同时,薄膜微结构与表面形貌的表征结果表明:薄膜的非晶晶态转变受温度和膜厚两个因素共同控制。

关 键 词:高介电质薄膜  HfO2  原子层沉积  生长行为
收稿时间:2015/4/14 0:00:00

Growth Behavior of Hafnium Oxide Film by Atomic Layer Deposition and Its Modulation
Nie Xianglong,Ma Dayan and Xu Kewei.Growth Behavior of Hafnium Oxide Film by Atomic Layer Deposition and Its Modulation[J].Rare Metal Materials and Engineering,2015,44(11):2907-2912.
Authors:Nie Xianglong  Ma Dayan and Xu Kewei
Abstract:High-k hafnium oxide films were deposited by atomic layer deposition (ALD) on p-type Si (100) substrates. Tetrakis-diethylamino-hafnium (TDEAH) and water were used as hafnium precursor and the oxidant, respectively. Effects of deposition parameters, e.g., flow of precursors, pressure of the reactor, and temperature of the reactor and precursors on the growth of HfO2 films were investigated. By the adjustment of deposition parameters, two growth models of HfO2 films, chemical vapour deposition (CVD) liked growth model and ALD growth model were found. Results indicate that the growth model mainly depends on Q and M. There exists a transition from CVD-liked growth model to ALD growth model by the optimization of deposition parameters. The optimal deposition parameters with a GPC (growth per cycle) of 0.1 nm /cycle were obtained. Moreover, the results show that the crystallization of HfO2 film is under the control of temperature and thickness of the film.
Keywords:high-k  HfO2  atomic layer deposition  growth behaviour
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