共溅射氧化法制备掺钼VO_2及其相变特性

采用共溅射氧化法,在普通玻璃衬底上室温直流溅射沉积钒钼金属薄膜,再在大气环境下经热氧化处理获得掺钼VO2薄膜。通过XRD、SEM、热致相变电学特性等分析,研究制备工艺及掺杂改性对掺钼VO2薄膜的微结构、形貌、热滞回线和相变温度的影响。实验与分析结果表明,与相同厚度的纯VO2薄膜相比,钼掺杂显著改变了VO2薄膜的表面形貌特征,掺钼VO2薄膜呈多晶态且沿VO2(002)择优取向生长,结晶性和取向性明显提高,薄膜的相变温度降低至38℃,热滞回线宽度收窄约至8℃。低温共溅射氧化法制备的掺钼VO2薄膜的热阻效应明显,薄膜的金属-半导体相变特性良好。

Preparation of Mo-doped VO2 Thin Films via Cosputtering-Oxidation and Their Phase Transition Properties

The V-Mo metal thin films were deposited on the glass substrates by magnetron co-sputtering at room temperature, and then the prepared metal thin films were sufficiently oxidized to the Mo-doped VO2 thin films by thermal oxidation under the air condition. The effects of the preparation processing and Mo doping on the microstructure, the morphology, the thermal hysteresis loop and phase transition temperature of the VO2 thin films were analyzed by XRD, SEM and resistance-temperature measurement. The results show that Mo doping significantly changes the surface morphologies of VO2 thin films, and Mo-doped VO2 thin films exhibit VO2(002) preferred orientation growth with greatly improved crystallinity and orientation. Compared with VO2, the phase transition temperature of Mo-doped VO2 thin films drops to 38 oC, and the width of thermal hysteresis loop narrows to 8 oC. It is demonstrated that Mo-doped VO2 thin films prepared by V-Mo cosputtered-oxidation at room temperature have an obvious thermal sensitive effect, and keep a good characteristic from metal to semiconductor phase transition