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短波红外纳米PbSe薄膜制备及光电性能研究
引用本文:姚官生,司俊杰,陈凤金,孟超.短波红外纳米PbSe薄膜制备及光电性能研究[J].航空兵器,2011(3):17-19,27.
作者姓名:姚官生  司俊杰  陈凤金  孟超
作者单位:中国空空导弹研究院,河南洛阳,471009
基金项目:航空科学基金资助项目(2007ZC12003)
摘    要:采用化学沉淀的方法在石英衬底上制备了短波红外纳米PbSe薄膜.XRD,SEM,TEM以及红外透射光谱测试分析结果表明,所制备的PbSe薄膜为纳米多晶薄膜,表面平整致密,薄膜的晶粒尺寸为10 nm左右,由于量子效应,薄膜吸收截止边相对PbSe体材料蓝移至1.6 μm;经过敏化、光刻及金属化制备了PbSe单元光导探测器,在...

关 键 词:硒化铅  化学浴沉淀  光导探测器  光谱响应

Preparation and Photoelectric Property Study of Shortwave IR PbSe Nano-Crystailinse Film
YAO Guan-sheng,SI Jun-jie,CHEN Feng-jin,MENG Chao.Preparation and Photoelectric Property Study of Shortwave IR PbSe Nano-Crystailinse Film[J].Aero Weaponry,2011(3):17-19,27.
Authors:YAO Guan-sheng  SI Jun-jie  CHEN Feng-jin  MENG Chao
Affiliation:YAO Guan-sheng,SI Jun-jie,CHEN Feng-jin,MENG Chao(China Airborne Missile Academy,Luoyang 471009,China)
Abstract:Lead selenide thin film for shortwave infrared detector is deposited on quartz glass substrate by chemical bath deposition.XRD,SEM,TEM and Fourier transform infrared spectroscopy are employed to characterize PbSe thin films.Experiments show that the film is polycrystalline nano structure,with grain size about 10 nm.Absorption edge of the film shifts to 1.6 μm due to quantum confinement effect.Proto-type PbSe photoconductive detector is fabricated.The responsive range is 0.6 to 1.5μm in spectral test under ambient temperature.
Keywords:lead selenide  chemical bath deposition  photoconductive detector  spectral response  
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