| MBE生长高功率列阵激光器的研究 |
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| 引用本文： | 李忠辉,王玲,王玉霞,杨进华,张兴德.MBE生长高功率列阵激光器的研究[J].兵工学报,2002,23(3):430-432. |
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| 作者姓名： | 李忠辉 王玲 王玉霞 杨进华 张兴德 |
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| 作者单位： | 长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022 |
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| 摘 要： | 利用V80型MBE生长GaAlAs/GaAs梯度折射率分别限制单量子阱(GRIN-SCH-SQW)结构.测试结果表明,该结构晶格和光学质量符合设计要求.制成激光器列阵,室温连续输出功率达7.2W,峰值波长为807～809nm,经柱透镜光纤耦合后的光强远场分布为θ∥=8°,θ⊥=3.5°.
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| 关 键 词： | 分子束外延 列阵激光器 分别限制 量子阱 |
HIGH POWER ARRAY SEMICONDUCTOR LASER GROWN BY MBE |
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| Li Zhonghui,Wang Ling,Wang Yuxia,Yang Jinhua,Zhang Xingde.HIGH POWER ARRAY SEMICONDUCTOR LASER GROWN BY MBE[J].Acta Armamentarii,2002,23(3):430-432. |
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| Authors: | Li Zhonghui Wang Ling Wang Yuxia Yang Jinhua Zhang Xingde |
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| Abstract: | GaAlAs/GaAs material having gradient refraction index, and a separate confinement single quantum well structure has been grown by MBE. Experimental results show that the sample's quality reached the design requirements. The CW output power of the array laser diodes is up to 7.2 W with a peak wavelength of 807nm to 809nm. |
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| Keywords: | molecular beam epitaxy(MBE) array laser separate confinement quantun well |
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