硅锗技术及其在无线射频领域的应用研究

本文概述了硅锗(SiGe)技术发展趋势及优势, 阐述了硅锗双极互补型金属氧化物半导体(SiGe BiCMOS)技术, 硅锗异质结双极晶体管(SiGe HBT)器件在无线通信领域优良的性能, 低廉的成本, 可以说SiGe材料的出现为半导体材料和工艺增添了新的活力. 硅互补型金属氧化物半导体(Si CMOS)工艺因其低廉的成本, 较好的一致性是大规模数字集成电路制造的基础, 而硅锗互补型金属氧化物半导体/硅锗双极互补型金属氧化物半导体(SiGe CMOS/BiCMOS)既有硅互补型金属氧化物半导体(CMOS)工艺的优点, 又有良好的高频性能, 特别是SiGe HBT的出现是SiGe器件的工作频率可直接应用到微波频段, 而其成本和噪声性能是砷化镓(GaAs)材料无法比拟的. 随着对SiGe HBT, 硅锗场效应晶体管(SiGe FET)的研究, SiGe器件的高频性能, 低噪声性能, 功率和线性性能将得到展现, 为进一步降低收发信机的成本, 提高其集成度打下了基础, 展现了SiGe技术的无线领域广阔的应用前景.

APPLICATIONS OF SIGE TECHNOLOGY IN RF FIELDS

This paper outlines the tendencies and advantages of SiGe technology. It is shown that SiGe BiCMOS technology and SiGe HBT are very promising for applications in RF and microwave circuits owing to their superiorities in frequency performance, noise performance, etc.. At the same time, market priorities of these products put a premium on their low-cost/low-power/high-volume implementation of their characteristics. Drawing an analogy to digital integrated circuit technology, SiGe appears to be the optimum choice for RF applications. It might follow the same path that digital IC implementations have thus far followed toward CMOS-with costs dropping dramatically as the level of integration increases. It is seen that SiGe devices will have their wide foreground in the fields of RF and microwaves.