| Stability of the Third Generation Intensifier under Illumination |
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| 作者姓名： | 杜晓晴 杜玉杰 常本康 |
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| 作者单位： | InstituteofElectronicEngineeringandOptoelectronicsTechnology,NanjingUniversityofScienceandTechnology,NanjingJiangsu210094,China |
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| 摘 要： | The stability under illumination of transmission-mode GaAs photocathode sealed in the third generation intensifier is investigated by use of spectral response testing instruments. The variations of spectral response with the illumination times under weak and intense illumination are compared. The variations of photoemission performance parameters are also characterized. The results show that during initial several weak illuminations photocathode behaves no evident decay and a maximum sensitivity is achieved, while under intense illumination the sensitivity of photocathode begin to decrease largely at the first illumination. The calculated performance parameters show that the variation of surface escape probability with illumination times is a direct cause of instability of photocathode. It is also found that under intense illumination peak wavelength is moved towards short-wave and peak response is decreased, which shows that the ability of long-wave response of photocathode is decreased.
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| 关 键 词： | 砷化镓光电阴极 光谱响应 稳定性 逃脱概率 |
Stability of the Third Generation Intensifier under Illumination |
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| DU Xiao-qing,DU Yu-jie,CHANG Ben-kang.Stability of the Third Generation Intensifier under Illumination[J].Journal of China Ordnance,2005,1(1):73-76. |
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| Authors: | DU Xiao-qing DU Yu-jie CHANG Ben-kang |
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| Abstract: | The stability under illumination of transmission-mode GaAs photocathode sealed in the third generation intensi-fier is investigated by use of spectral response testing instruments. The variations of spectral response with the illumination times under weak and intense illumination are compared. The variations of photoemission performance parameters are also characterized. The results show that during initial several weak illuminations photocathode behaves no evident decay and a maximum sensitivity is achieved, while under intense illumination the sensitivity of photocathode begin to decrease largely at the first illumination. The calculated performance parameters show that the variation of surface escape probability with illumination times is a direct cause of instability of photocathode. It is also found that under intense illumination peak wavelength is moved towards short-wave and peak response is decreased, which shows that the ability of long-wave response of photocathode is decreased. |
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| Keywords: | GaAs photocathode spectral response stability escape probability Illumination Generation escape probability peak response variation surface direct cause instability decrease results show during initial photocathode decay maximum sensitivity photoemission |
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