| PECVD沉积氮化硅膜的工艺研究 |
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| 引用本文： | 刘志平,赵谡玲,徐征,刘金虎,李栋才.PECVD沉积氮化硅膜的工艺研究[J].太阳能学报,2011,32(1):54-59. |
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| 作者姓名： | 刘志平 赵谡玲 徐征 刘金虎 李栋才 |
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| 作者单位： | 1. 北京交通大学太阳能研究所,北京,100044;北京中联科伟达技术股份有限公司,北京,100044
2. 北京交通大学太阳能研究所,北京,100044 |
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| 基金项目： | 国家自然科学基金，北京市科委，教育部博士点基金，博士点新教师基金，北京市科技新星计划 |
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| 摘 要： | 采用等离子体增强型化学气相沉积（PECVD）法在晶体硅太阳电池表面镀上一层氮化硅减反射膜,通过数值分析和实验研究的方法讨论了压强、SiH4/NH3比、总气体流量及时间等工艺参数对镀膜速率、折射率和镀膜均匀性及钝化效果的影响。在温度为450℃、NH3/SiH4=8:1、总气体流量为4320sccm、压力为170Pa、沉积时间为720s的条件下生长出平均膜厚为75nm、折射率为2.05、少子寿命相对较高的氮化硅膜,且应用于单晶整舟为168片的管式PECVD设备,片间膜厚级差在5nm以内,而折射率级差在0.3以内,少子寿命可提高约30%。
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| 关 键 词： | PECVD 氮化硅 镀膜工艺 少子寿命 |
STUDY ON THE PREPARATION OF SiNx FILM BY PECVD |
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| Liu Zhiping,Zhao SuLing,Xu Zheng,Liu Jinhu,Li Dongcai.STUDY ON THE PREPARATION OF SiNx FILM BY PECVD[J].Acta Energiae Solaris Sinica,2011,32(1):54-59. |
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| Authors: | Liu Zhiping Zhao SuLing Xu Zheng Liu Jinhu Li Dongcai |
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| Affiliation: | Liu Zhiping~(1,2),Zhao SuLing~1,Xu Zheng~1,Liu Jinhu~(1,Li Dongcai~(1,2) (1.Solar Energy Research Institute,Beijing Jiaotong University,Beijing 100044,China,2.China United Cleaning Technology Co.Ltd.,China) |
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| Abstract: | Antireflection from of silicon nitride(SiN_x)was deposited for crystalline silicon solar cells by means of plasma enhanced chemical vapor deposition(PECVD).The effect of the pressure,ratio of SiH_4/NH_3,the gas flow,temperature and deposition time were investigated.The deposition rate,refractive index,film uniformity and minority carrier lifetime were realized.The optimized film of 75nm SiN_x with reflection index of 2.05 was obtained in the production line. |
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| Keywords: | PECVD |
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