| 热氧化生长的SiO2钝化膜对晶体硅太阳电池性能的影响 |
| |
| 引用本文： | 叶发敏,冯仕猛,郭爱娟,熊胜虎.热氧化生长的SiO2钝化膜对晶体硅太阳电池性能的影响[J].太阳能学报,2012,33(2):270-272. |
| |
| 作者姓名： | 叶发敏 冯仕猛 郭爱娟 熊胜虎 |
| |
| 作者单位： | 1. 上海交通大学物理系,上海,200240
2. 上海交大泰阳绿色能源有限公司,上海,200240 |
| |
| 摘 要： | 使用干氧热氧化的方法在晶体硅太阳电池表面生长SiO2钝化膜。结果表明:在780℃下生长的氧化薄膜钝化效果较好,实验检测少子寿命提高了8.3μs,以此为基础制备的太阳电池转换效率达到17.38%。实验还对氮气气氛下的氧化进行研究,发现当氮气流量为10L/min时,能强化薄膜的钝化效果,少子寿命可提高9.4μs。
|
| 关 键 词： | 晶体硅 太阳电池 钝化 干氧氧化 表面复合 |
SURFACE PASSIVATION OF THERMAL OXIDATION OF SiO2 FILM ON INFLUENCE TO PERFORMANCE OF CRYSTALLINE SILICON SOLAR CELLS |
| |
| Ye Famin
,
Feng Shimeng
,
Guo Aijuan
,
Xiong Shenghu.SURFACE PASSIVATION OF THERMAL OXIDATION OF SiO2 FILM ON INFLUENCE TO PERFORMANCE OF CRYSTALLINE SILICON SOLAR CELLS[J].Acta Energiae Solaris Sinica,2012,33(2):270-272. |
| |
| Authors: | Ye Famin Feng Shimeng Guo Aijuan Xiong Shenghu |
| |
| Affiliation: | 1.Dept.of Physics,Shanghai Jiao Tong University,Shanghai 200240,China; 2.Shanghai Topsola Green Energy Co.,Ltd.,Shanghai 200240,China) |
| |
| Abstract: | The article focus on the research about the surface passivation by means of dry-oxygen thermal oxidation to grow a SiO2 film on the surface of crystalline silicon cells.The experimental result shows that,at the 780℃ of the oxidation temperature,the effect of passivation is best,which can raise the minority carrier lifetime as many as 8.3μs,and the efficiency of solar cells is up to 17.38%.Meanwhile,the oxidation at the atmosphere of nitrogen is studied.The result shows that,when the nitrogen flow is 10L/min,the effect of passivation is improved,which can raise the minority carrier lifetime as many as 9.4μs. |
| |
| Keywords: | crystalline silicon solar cells passivation dry-oxygen oxidation surface recombination |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
