| 在电共沉积GaAs薄膜上制作肖特基势垒的研究 |
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| 引用本文： | 曹一江,王喜莲,王磊,韩爱珍,高元恺.在电共沉积GaAs薄膜上制作肖特基势垒的研究[J].太阳能学报,2007,28(8):849-851. |
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| 作者姓名： | 曹一江 王喜莲 王磊 韩爱珍 高元恺 |
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| 作者单位： | 1. 哈尔滨理工大学应用科学学院,哈尔滨,150080
2. 哈尔滨工业大学航天学院,哈尔滨,150001 |
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| 摘 要： | 应用化学电共沉积法在Ti片、导电玻璃和导电PI基片上制备了GaAs多晶薄膜,并在薄膜上应用电子束蒸发淀积了一层超薄的SiOx,然后采用PVD法在其上淀积一层金属薄层,制备出MIS结构的肖特基势垒。经测试Ag-SiOx-nGaAs结构和Au-SiOx-nGaAs结构的I-V特性,表明所制备的肖特基势垒具有良好的整流特性。
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| 关 键 词： | 电共沉积 肖特基势垒 GaAs薄膜 |
| 文章编号： | 0254-0096（2007）08-0849-03 |
| 修稿时间： | 2006-02-08 |
STUDY ON THE SCHOTTKY BARRIERS GROWN ON THE ELECTRODEPOSION GAAS FILMS |
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| Cao Yijiang,Wang Xilian,Wang Lei,Han Aizhen,Gao Yuankai.STUDY ON THE SCHOTTKY BARRIERS GROWN ON THE ELECTRODEPOSION GAAS FILMS[J].Acta Energiae Solaris Sinica,2007,28(8):849-851. |
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| Authors: | Cao Yijiang Wang Xilian Wang Lei Han Aizhen Gao Yuankai |
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| Affiliation: | 1. College of Applied Science, Harbin Univ. Sci. Tech., Harbin 150080, China ; 2. CoUege of Astronautics Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | The chemical electrodeposition approach to fabricate GaAs polyciystalline film on Ti slice, TCO glass and electric PI slice with an over-thin SiOx deposited on the film by using electron beam evaporation was presented in this paper. Schottky barriers of MIS structure was grown on the SiOx film by depositing a metal film with PVD approach. The grown schottky barriers show good rectifier characteristics by testing the I-V characteristics of the structure of Ag-SiOx-nGaAs and Au-SiOx-nGaAs. |
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| Keywords: | electrodeposion schottky barriers GaAs film |
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