Experimental and first-principles studies of BiVO4/BiV1-xMnxO4-y n-n+ homojunction for efficient charge carrier separation in sunlight induced water splitting

Though bismuth vanadate (BiVO₄) is extensively used as a photoactive material, its performance in harnessing solar energy is limited by ineffective separation of photo-excited charge carriers. We demonstrate here a concept of n-n⁺ homojunction of BiVO₄/BiV_1-xMn_xO_4-y, which improves its charge separation efficiency. Using first-principles theoretical calculations, we determine the effect of Mn substitution on oxygen vacancy formation energies and associated changes in the electronic structure of BiVO₄. Showing that Mn substitution pushes the Fermi level of BiVO₄ towards its conduction band, we predict that the associated enhanced bending of bands at the homojunction (BiVO₄/BiV_1-xMn_xO_4-y) facilitates efficient separation of charge carriers. With Mott-Schottky experiments, we verify the increased band bending at the n-n⁺ homojunction, and show that the maximum photocurrent density measured in a sample with n-n⁺ homojunction is ten times higher than that obtained of the pristine sample. Secondly, Mn substitution in BiVO₄ also reduces the oxygen vacancy formation energy, promoting higher concentration of O-vacancies, further enhancing the photoelectrochemical response.