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Physical and electrochemical characterization of Bi2O3-doped scandia stabilized zirconia
Authors:B Bai  NM Sammes  AL Smirnova
Affiliation:1. Department of Mechanical Engineering, University of Connecticut, 44 Weaver Road, Storrs, CT 06269, USA;2. Department of Metallurgical and Materials Engineering, Colorado School of Mines, CO 80401, USA;3. Department of Chemical, Materials & Biomolecular Engineering, University of Connecticut, CT 06269, USA
Abstract:Electrolytes based on Sc2O3–ZrO2 exhibit the highest ionic conductivity of zirconia based systems, however, stabilization of the electrochemical properties at operational temperatures, 600–1000 °C, are needed before implementation into SOFCs. Trace additions of Bi2O3 are a known sintering aid for zirconia systems. Crystal structures, electrical properties and long-term stability of Bi2O3-doped 10ScSZ systems were investigated. The addition of more than 1.0 mol% Bi2O3 resulted in suppression of the rhombohedral to cubic phase transformation at 600 °C and cubic phase stabilization at room temperature. The ionic conductivity of 10ScSZ was also improved by Bi2O3 additions. A maximum conductivity of 0.034 S cm−1 at 700 °C was observed in 2 mol% Bi2O3-doped 10ScSZ sintered at 1300 °C. No phase change was observed in 10ScSZ after annealing at 1000 °C. A certain amount of monoclinic phase, and dramatic conductivity decrease, were observed in Bi2O3-doped samples sintered below 1200 °C after annealing. However, 10ScSZ and 2 mol% Bi2O3-doped 10ScSZ sintered at 1300 °C show no significant conductivity degradation with annealing. Samples with more than 1 mol% Bi2O3 and sintered above 1300 °C resulted in good ionic conductivity and stability.
Keywords:Scandia stabilized zirconia  Bismuth oxide  Electrolyte  IT-SOFC
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