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Ce掺杂的TiO_2电容-压敏材料结构和电性能研究
引用本文:孟黎清,李红耘,熊西周,罗绍华.Ce掺杂的TiO_2电容-压敏材料结构和电性能研究[J].电瓷避雷器,2003(6):38-42.
作者姓名:孟黎清  李红耘  熊西周  罗绍华
作者单位:1. 山西大学工程学院建筑工程与管理系材力教研室,山西,太原,030013
2. 广州新日电子有限公司,广东,广州,510335
3. 清华大学材料科学与工程系,新型陶瓷与精细工艺国家重点实验室,北京,100084
基金项目:国家重点实验室基金,X.GZ0207,
摘    要:通过对样品压敏性能、介电性能的测定和晶体结构、表面形貌分析,研究了CeO2对TiO2电容-压敏电阻器的影响。研究发现CeO2对TiO2电容-压敏电阻的性能有显著的影响。在1350℃烧结条件下,0.4%摩尔分数CeO2的样品表现出优良的综合电性能,其压敏电压为15.84V/mm,非线性系数α为4.62,并具有很高的表观介电常数(εr=158600),较低的介电损耗(tgδ=0.32),是一种较有潜力的新型电容-压敏电阻器。

关 键 词:二氧化钛  压敏电阻器  电容  二氧化铈
文章编号:1003-8337(2003)06-0040-05
修稿时间:2003年8月2日

The Microstructure and Electric Properties of TiO2 Based Capacitor-varistor Multi-function Ceramics Doped Ce
MENG Li-qing,LI Hong-yun,XIONG Xi-zhou,LUO Shao-hua.The Microstructure and Electric Properties of TiO2 Based Capacitor-varistor Multi-function Ceramics Doped Ce[J].Insulators and Surge Arresters,2003(6):38-42.
Authors:MENG Li-qing  LI Hong-yun  XIONG Xi-zhou  LUO Shao-hua
Affiliation:MENG Li-qing~1,LI Hong-yun~2,XIONG Xi-zhou~2,LUO Shao-hua~3
Abstract:A novel(Ce,Nb,Si)-doped TiO_2ceramics seems to be useful as a varistor material.The effect of CeO_2 on Nb-doped TiO_2 based capacitor-varistors was investigated and analyzed by varistor and dielectric measurements, XRD,SEM.It was found that the CeO_2 dopant had significant effect on the varistor properties and dielectric properties of Nb-doped TiO_2 based capacitor-varistors ceramics sintering at 1 350℃.An optimal composition dopant with 0.4% CeO_2 exhibited a low breakdown voltage of 15.84V/mm a nonlinear coefficient of 4.62.The ultrahigh dielectric constant(ε_r=158 6000)as well as relatively low dielectric loss(tgδ=0.32)were found at room temperature.The effects of cerium on the TiO_2 varistor were supported by products of perrierite containing cerium,silicon and titanium.
Keywords:TiO_2  varistors  capacitor  cerium dioxide
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