紫外光照射对聚丙烯核孔膜蚀刻的影响

采用主峰波长为365 nm的紫外光灯对经³²S离子和⁷⁹Br离子辐照过的16 μm厚的聚丙烯（PP）膜正反面分别敏化6、8、10、12 h。选取重铬酸钾和硫酸的混合溶液作为蚀刻液对样品膜进行蚀刻，采用电导法监测电流随蚀刻时间的变化，确定不同敏化时间下样品膜的导通时间。同种离子辐照后敏化时间越长，膜导通时间越短，径迹蚀刻速率也越快，且辐照离子的原子序数越大，该影响越明显。相同敏化时间（12 h）和蚀刻条件下，³²S离子辐照后膜的导通时间是⁷⁹Br离子辐照后的4.8倍。

Effect of UV-irradiation on Etching Polypropylene Nuclear Pore Membrane

16 μm polypropylene (PP) films irradiated by ³²S and ⁷⁹Br were sensitized for 6, 8, 10 and 12 h on both sides by UV-irradiation light whose main peak wavelength is 365 nm. The mixed solution of potassium dichromate and sulfuric acid was used as etchant for the film samples. The conductance measurement was applied to monitor the current change with etching time. The breakthrough time of the samples at different sensitization time was measured. With the same ion irradiation, the longer the sensitization time, the faster the etching rate. The relation between sensitization time and the etching rate also depends on the irradiating ions. At the same sensitization time (12 h) and etching conditions, the breakthrough time for samples irradiated by ³²S is 4.8 times of that by ⁷⁹Br.