加速器单粒子效应样品温度测控系统研制及实验应用

为满足国内半导体器件单粒子效应(SEE)截面与温度的关系研究需求,本文基于北京HI-13串列加速器SEE辐照实验终端研制了样品温度测控系统,实现了90~450K范围内实验样品温度的测量和控制,系统控制精度好于±1K。为验证系统可靠性,使用该系统研究了SRAM单粒子翻转(SEU)截面随温度的变化关系,在215~353 K范围内测量了SRAM翻转截面随温度的变化曲线。结果表明,SRAM SEU截面随温度的升高而增加,与理论预期结果一致。

Development and Experimental Application of Sample Temperature Measurement and Control System for Accelerator-based Single Event Effect

In order to meet domestic demands of studying the relationship between temperature and single event effect (SEE) cross-section, a device under test (DUT) temperature measurement and control system was developed based on Beijing HI-13 tandem accelerator SEE irradiation facility. The DUT temperature could be measured and controlled within the range of 90-450 K, and its control accuracy is better than ±1 K. To verify the reliability of this system, the relationship between temperature and single event upset (SEU) cross-section was investigated in 150 nm thin film transistor (TFT) technology SRAM in the temperature range of 215-353 K. The results show that the SEU cross-section increases with temperature, and it is consistent with the theoretical expected result.